Lead Telluride p-n Junctions for Infrared Detection: Electrical and Optical Characteristics
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| Formato: | Artículo científico |
| Lenguaje: | en |
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Sociedade Brasileira de Física
2006
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| _version_ | 1876456143956475904 |
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| author | A. S. Barros |
| author_facet | A. S. Barros |
| contents | Lead Telluride p-n Junctions for Infrared Detection: Electrical and Optical Characteristics A. S. Barros E. Abramof P.H.O. Rappl Física, Astronomía y Matemáticas PbTe mesa diodes Infrared detection Electrical and optical characteristics the hole concentration was kept constant at 1017 cm¡3 and the electron concentration varied between 1017 and1019 cm¡3. Capacitance versus voltage analysis revealed that for n > 1018 cm¡3, a one-sided abrupt junction isformed. The direct and reverse branches of the current versus voltage curves exhibited different forms among thediodes. The R0A product varied between 0.23 and 31.8 Wcm2, and the integral detectivity ranged from 1.1x108to 6.5x1010 cmHz1=2W¡1. The performance of the best PbTe photodiodes fabricated here is comparable to thecommercial InSb and HgCdTe infrared detectors, and to the PbTe sensors grown on Si substrate. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436365 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36 |
| format | Artículo científico |
| id | redalyc_46436365 |
| institution | Redalyc |
| language | en |
| publishDate | 2006 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Lead Telluride p-n Junctions for Infrared Detection: Electrical and Optical Characteristics A. S. Barros Física, Astronomía y Matemáticas PbTe mesa diodes Infrared detection Electrical and optical characteristics Lead Telluride p-n Junctions for Infrared Detection: Electrical and Optical Characteristics A. S. Barros E. Abramof P.H.O. Rappl Física, Astronomía y Matemáticas PbTe mesa diodes Infrared detection Electrical and optical characteristics the hole concentration was kept constant at 1017 cm¡3 and the electron concentration varied between 1017 and1019 cm¡3. Capacitance versus voltage analysis revealed that for n > 1018 cm¡3, a one-sided abrupt junction isformed. The direct and reverse branches of the current versus voltage curves exhibited different forms among thediodes. The R0A product varied between 0.23 and 31.8 Wcm2, and the integral detectivity ranged from 1.1x108to 6.5x1010 cmHz1=2W¡1. The performance of the best PbTe photodiodes fabricated here is comparable to thecommercial InSb and HgCdTe infrared detectors, and to the PbTe sensors grown on Si substrate. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436365 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36 |
| title | Lead Telluride p-n Junctions for Infrared Detection: Electrical and Optical Characteristics |
| topic | Física, Astronomía y Matemáticas PbTe mesa diodes Infrared detection Electrical and optical characteristics |
| url | https://www.redalyc.org/articulo.oa?id=46436365 |