SnO2 Extended Gate Field-Effect Transistor as pH Sensor
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| Format: | Artículo científico |
| Language: | en |
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Sociedade Brasileira de Física
2006
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| _version_ | 1866558186652172288 |
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| author | P. D. Batista |
| author_facet | P. D. Batista |
| contents | SnO2 Extended Gate Field-Effect Transistor as pH Sensor P. D. Batista C. F. de O. Graeff F. J. R. Fernandez F. das C. Marques M. Mulato Física, Astronomía y Matemáticas SnO2 pH sensor effect transistor Extended gate field Extended gate field-effect transistor (EGFET) is a device composed of a conventional ion-sensitive electrodeand a MOSFET device, which can be applied to the measurement of ion content in a solution. This structurehas a lot of advantages as compared to the Ion- Sensitive Field Effect Transistor (ISFET). In this work, weconstructed an EGFET by connecting the sensing structure fabricated with SnO2 to a commercial MOSFET(CD4007UB). From the numerical simulation of site binding model it is possible to determine some of thedesirable characteristics of the films. We investigate and compare SnO2 films prepared using both the Sol-geland the Pechini methods. The aim is an amorphous material for the EGFET. The SnO2 powder was obtained atdifferent calcinating temperatures (200 - 5000C) and they were investigated by X-ray diffraction (XRD), infraredspectroscopy (IR), thermogravimetric analysis (TGA) and differential thermal analysis (DTA). The films wereinvestigated as pH sensors (range 2-11). 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436366 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36 |
| format | Artículo científico |
| id | redalyc_46436366 |
| language | en |
| publishDate | 2006 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | SnO2 Extended Gate Field-Effect Transistor as pH Sensor P. D. Batista Física, Astronomía y Matemáticas SnO2 pH sensor effect transistor Extended gate field SnO2 Extended Gate Field-Effect Transistor as pH Sensor P. D. Batista C. F. de O. Graeff F. J. R. Fernandez F. das C. Marques M. Mulato Física, Astronomía y Matemáticas SnO2 pH sensor effect transistor Extended gate field Extended gate field-effect transistor (EGFET) is a device composed of a conventional ion-sensitive electrodeand a MOSFET device, which can be applied to the measurement of ion content in a solution. This structurehas a lot of advantages as compared to the Ion- Sensitive Field Effect Transistor (ISFET). In this work, weconstructed an EGFET by connecting the sensing structure fabricated with SnO2 to a commercial MOSFET(CD4007UB). From the numerical simulation of site binding model it is possible to determine some of thedesirable characteristics of the films. We investigate and compare SnO2 films prepared using both the Sol-geland the Pechini methods. The aim is an amorphous material for the EGFET. The SnO2 powder was obtained atdifferent calcinating temperatures (200 - 5000C) and they were investigated by X-ray diffraction (XRD), infraredspectroscopy (IR), thermogravimetric analysis (TGA) and differential thermal analysis (DTA). The films wereinvestigated as pH sensors (range 2-11). 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436366 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36 |
| title | SnO2 Extended Gate Field-Effect Transistor as pH Sensor |
| topic | Física, Astronomía y Matemáticas SnO2 pH sensor effect transistor Extended gate field |
| url | https://www.redalyc.org/articulo.oa?id=46436366 |