Spin Dynamics of Electrons and Holes in p-Doped InAs/GaAs Quantum Dots
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| Format: | Artículo científico |
| Language: | en |
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Sociedade Brasileira de Física
2006
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| _version_ | 1866558092741705728 |
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| author | P.-F. Braun |
| author_facet | P.-F. Braun |
| contents | Spin Dynamics of Electrons and Holes in p-Doped InAs/GaAs Quantum Dots P.-F. Braun L. Lombez X. Marie B. Urbaszek T. Amand P. Renucci J.-L. Gauffier V.K. Kalevich K.V. Kavokin O. Krebs P. Voisin Física, Astronomía y Matemáticas InAs Spin dynamics GaAs quantum dots Time resolved photoluminescence We have investigated the electron and hole spin dynamics in p-doped semiconductor InAs/GaAs quantumdots by time resolved photoluminescence. We observe a decay of the average electron spin polarisation downto 1/3 of its initial value with a characteristic time of TD ¼ 500ps. We attribute this decay to the hyperfineinteraction of the electron spin with randomly orientated nuclear spins. Magnetic field dependent studies revealthat this efficient spin relaxation mechanism can be suppressed by a field of the order of 100mT. In pump-probelike experiments we demonstrate that the resident hole spin, written with a first pulse, remains stable longenough to be read 15ns later with a second pulse. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436367 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36 |
| format | Artículo científico |
| id | redalyc_46436367 |
| language | en |
| publishDate | 2006 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Spin Dynamics of Electrons and Holes in p-Doped InAs/GaAs Quantum Dots P.-F. Braun Física, Astronomía y Matemáticas InAs Spin dynamics GaAs quantum dots Time resolved photoluminescence Spin Dynamics of Electrons and Holes in p-Doped InAs/GaAs Quantum Dots P.-F. Braun L. Lombez X. Marie B. Urbaszek T. Amand P. Renucci J.-L. Gauffier V.K. Kalevich K.V. Kavokin O. Krebs P. Voisin Física, Astronomía y Matemáticas InAs Spin dynamics GaAs quantum dots Time resolved photoluminescence We have investigated the electron and hole spin dynamics in p-doped semiconductor InAs/GaAs quantumdots by time resolved photoluminescence. We observe a decay of the average electron spin polarisation downto 1/3 of its initial value with a characteristic time of TD ¼ 500ps. We attribute this decay to the hyperfineinteraction of the electron spin with randomly orientated nuclear spins. Magnetic field dependent studies revealthat this efficient spin relaxation mechanism can be suppressed by a field of the order of 100mT. In pump-probelike experiments we demonstrate that the resident hole spin, written with a first pulse, remains stable longenough to be read 15ns later with a second pulse. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436367 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36 |
| title | Spin Dynamics of Electrons and Holes in p-Doped InAs/GaAs Quantum Dots |
| topic | Física, Astronomía y Matemáticas InAs Spin dynamics GaAs quantum dots Time resolved photoluminescence |
| url | https://www.redalyc.org/articulo.oa?id=46436367 |