Spin Dynamics of Electrons and Holes in p-Doped InAs/GaAs Quantum Dots

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Main Author: P.-F. Braun
Format: Artículo científico
Language:en
Published: Sociedade Brasileira de Física 2006
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author P.-F. Braun
author_facet P.-F. Braun
contents Spin Dynamics of Electrons and Holes in p-Doped InAs/GaAs Quantum Dots P.-F. Braun L. Lombez X. Marie B. Urbaszek T. Amand P. Renucci J.-L. Gauffier V.K. Kalevich K.V. Kavokin O. Krebs P. Voisin Física, Astronomía y Matemáticas InAs Spin dynamics GaAs quantum dots Time resolved photoluminescence We have investigated the electron and hole spin dynamics in p-doped semiconductor InAs/GaAs quantumdots by time resolved photoluminescence. We observe a decay of the average electron spin polarisation downto 1/3 of its initial value with a characteristic time of TD ¼ 500ps. We attribute this decay to the hyperfineinteraction of the electron spin with randomly orientated nuclear spins. Magnetic field dependent studies revealthat this efficient spin relaxation mechanism can be suppressed by a field of the order of 100mT. In pump-probelike experiments we demonstrate that the resident hole spin, “written” with a first pulse, remains stable longenough to be ”read” 15ns later with a second pulse. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436367 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36
format Artículo científico
id redalyc_46436367
language en
publishDate 2006
publisher Sociedade Brasileira de Física
spellingShingle Spin Dynamics of Electrons and Holes in p-Doped InAs/GaAs Quantum Dots
P.-F. Braun
Física, Astronomía y Matemáticas
InAs
Spin dynamics
GaAs quantum dots
Time resolved photoluminescence
Spin Dynamics of Electrons and Holes in p-Doped InAs/GaAs Quantum Dots P.-F. Braun L. Lombez X. Marie B. Urbaszek T. Amand P. Renucci J.-L. Gauffier V.K. Kalevich K.V. Kavokin O. Krebs P. Voisin Física, Astronomía y Matemáticas InAs Spin dynamics GaAs quantum dots Time resolved photoluminescence We have investigated the electron and hole spin dynamics in p-doped semiconductor InAs/GaAs quantumdots by time resolved photoluminescence. We observe a decay of the average electron spin polarisation downto 1/3 of its initial value with a characteristic time of TD ¼ 500ps. We attribute this decay to the hyperfineinteraction of the electron spin with randomly orientated nuclear spins. Magnetic field dependent studies revealthat this efficient spin relaxation mechanism can be suppressed by a field of the order of 100mT. In pump-probelike experiments we demonstrate that the resident hole spin, “written” with a first pulse, remains stable longenough to be ”read” 15ns later with a second pulse. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436367 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36
title Spin Dynamics of Electrons and Holes in p-Doped InAs/GaAs Quantum Dots
topic Física, Astronomía y Matemáticas
InAs
Spin dynamics
GaAs quantum dots
Time resolved photoluminescence
url https://www.redalyc.org/articulo.oa?id=46436367