Transport Properties of a Ga1-xMnxAs/Ga1-yAlyAs Double-Barrier

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Autor principal: S. S. Makler
Formato: Artículo científico
Lenguaje:en
Publicado: Sociedade Brasileira de Física 2006
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author S. S. Makler
author_facet S. S. Makler
contents Transport Properties of a Ga1-xMnxAs/Ga1-yAlyAs Double-Barrier S. S. Makler C. F. Ritter I. C. da Cunha Lima Física, Astronomía y Matemáticas Spintronic devices Double barrier spin polarizer Diluted magnetic semiconductors We study the transport properties of a spin filter consisting of a double-barrier resonant tunneling device inwhich the well is made of a semimagnetic material. Even if the device could be made of several materials,we discuss here the case of a Ga1¡xMnxAs=Ga1¡yAlyAs system because it can be integrated into the wellknown AlAs=GaAs technology. We solve the Hamiltonian H = HK +HP+HE +HM +Hh¡i+Hh¡h: Its termsrepresent the kinetic energy, the double-barrier profile, the applied bias, the magnetic interaction, the holeimpurityattraction and the hole-hole repulsion, respectively. A very simple one-dimensional Green function isintroduced to solve self-consistently the Poisson equation for the profile due to the charge distribution. A realspace renormalization formalism is used to calculate exactly the currents. In a previous work we have shownthat the Rashba effect is weak. Therefore the results show very well defined spin-polarized currents. Our resultsconfirm that this system is a good device for spintronics. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436503 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3B Vol.36
format Artículo científico
id redalyc_46436503
language en
publishDate 2006
publisher Sociedade Brasileira de Física
spellingShingle Transport Properties of a Ga1-xMnxAs/Ga1-yAlyAs Double-Barrier
S. S. Makler
Física, Astronomía y Matemáticas
Spintronic devices
Double barrier spin polarizer
Diluted magnetic semiconductors
Transport Properties of a Ga1-xMnxAs/Ga1-yAlyAs Double-Barrier S. S. Makler C. F. Ritter I. C. da Cunha Lima Física, Astronomía y Matemáticas Spintronic devices Double barrier spin polarizer Diluted magnetic semiconductors We study the transport properties of a spin filter consisting of a double-barrier resonant tunneling device inwhich the well is made of a semimagnetic material. Even if the device could be made of several materials,we discuss here the case of a Ga1¡xMnxAs=Ga1¡yAlyAs system because it can be integrated into the wellknown AlAs=GaAs technology. We solve the Hamiltonian H = HK +HP+HE +HM +Hh¡i+Hh¡h: Its termsrepresent the kinetic energy, the double-barrier profile, the applied bias, the magnetic interaction, the holeimpurityattraction and the hole-hole repulsion, respectively. A very simple one-dimensional Green function isintroduced to solve self-consistently the Poisson equation for the profile due to the charge distribution. A realspace renormalization formalism is used to calculate exactly the currents. In a previous work we have shownthat the Rashba effect is weak. Therefore the results show very well defined spin-polarized currents. Our resultsconfirm that this system is a good device for spintronics. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436503 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3B Vol.36
title Transport Properties of a Ga1-xMnxAs/Ga1-yAlyAs Double-Barrier
topic Física, Astronomía y Matemáticas
Spintronic devices
Double barrier spin polarizer
Diluted magnetic semiconductors
url https://www.redalyc.org/articulo.oa?id=46436503