Electron Mobility Study of Hot-Wall CVD GaN and InN Nanowires
Fuente:
Redalyc
Saved in:
| Main Author: | |
|---|---|
| Format: | Artículo científico |
| Language: | en |
| Published: |
Sociedade Brasileira de Física
2006
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1876472759464230912 |
|---|---|
| author | Elena Cimpoiasu |
| author_facet | Elena Cimpoiasu |
| contents | Electron Mobility Study of Hot-Wall CVD GaN and InN Nanowires Elena Cimpoiasu Eric Stern Guosheng Cheng Ryan Munden Aric Sanders Mark A. Reed Física, Astronomía y Matemáticas GaN InN Nanowires Electron transport A review of the dependence of the electron mobility on the free carrier concentration for gallium nitrideand indium nitride nanowires grown using hot-wall chemical vapour deposition is presented. Gallium nitridenanowires exhibit mobilities of 100 cm2/Vs to below 1 cm2/Vs for carrier concentrations of 1019 to 1020 cm¡3.Theoretical estimations and annealing experiments indicate that the nanowires are heavily compensated. Indiumnitride nanowires also exhibit high carrier concentrations, of the order of 1020 to 1022 cm¡3. For both typesof nanowires, mobility decreases with increasing carrier concentration, consistent with transport limited byimpurity scattering. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436507 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3B Vol.36 |
| format | Artículo científico |
| id | redalyc_46436507 |
| institution | Redalyc |
| language | en |
| publishDate | 2006 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Electron Mobility Study of Hot-Wall CVD GaN and InN Nanowires Elena Cimpoiasu Física, Astronomía y Matemáticas GaN InN Nanowires Electron transport Electron Mobility Study of Hot-Wall CVD GaN and InN Nanowires Elena Cimpoiasu Eric Stern Guosheng Cheng Ryan Munden Aric Sanders Mark A. Reed Física, Astronomía y Matemáticas GaN InN Nanowires Electron transport A review of the dependence of the electron mobility on the free carrier concentration for gallium nitrideand indium nitride nanowires grown using hot-wall chemical vapour deposition is presented. Gallium nitridenanowires exhibit mobilities of 100 cm2/Vs to below 1 cm2/Vs for carrier concentrations of 1019 to 1020 cm¡3.Theoretical estimations and annealing experiments indicate that the nanowires are heavily compensated. Indiumnitride nanowires also exhibit high carrier concentrations, of the order of 1020 to 1022 cm¡3. For both typesof nanowires, mobility decreases with increasing carrier concentration, consistent with transport limited byimpurity scattering. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436507 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3B Vol.36 |
| title | Electron Mobility Study of Hot-Wall CVD GaN and InN Nanowires |
| topic | Física, Astronomía y Matemáticas GaN InN Nanowires Electron transport |
| url | https://www.redalyc.org/articulo.oa?id=46436507 |