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Autore principale: L. Villegas-Lelovsky
Natura: Artículo científico
Lingua:en
Pubblicazione: Sociedade Brasileira de Física 2006
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Accesso online:https://www.redalyc.org/articulo.oa?id=46436514
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author L. Villegas-Lelovsky
author_facet L. Villegas-Lelovsky
contents Transient Spin Dynamics in Semiconductors L. Villegas-Lelovsky Física, Astronomía y Matemáticas Interfaces Semiconductors Electrical injection Spin polarized transport We investigate the spin-resolved dynamics of spin-polarized carriers injected via a ferromagnetic scanningtunnelling-microscope tip (STM tip) into uniformly and non-uniformly n-doped bulk semiconductor – externallydriven by a current source. We propagate the injected spin packets (assumed gaussian in space at t = 0) byconsidering a spin hydrodynamic approach based on balance equations directly derived from a spin-dependentBoltzmann equation. We determine the spin-polarization landscapes (time and position) of the carrier population(n" ¡n#)=(n" +n#) and the current density ( j" ¡ j#)=( j" + j#). While in the uniformly-doped system thecarrier spin-polarization has a slow decay, in the non-uniformly doped system it shows a drastic fall down in theinterface. In contrast the current spin-polarization exhibits an enhancement for both of the systems particularlyin the interface. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436514 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3B Vol.36
format Artículo científico
id redalyc_46436514
language en
publishDate 2006
publisher Sociedade Brasileira de Física
spellingShingle Transient Spin Dynamics in Semiconductors
L. Villegas-Lelovsky
Física, Astronomía y Matemáticas
Interfaces
Semiconductors
Electrical injection
Spin polarized transport
Transient Spin Dynamics in Semiconductors L. Villegas-Lelovsky Física, Astronomía y Matemáticas Interfaces Semiconductors Electrical injection Spin polarized transport We investigate the spin-resolved dynamics of spin-polarized carriers injected via a ferromagnetic scanningtunnelling-microscope tip (STM tip) into uniformly and non-uniformly n-doped bulk semiconductor – externallydriven by a current source. We propagate the injected spin packets (assumed gaussian in space at t = 0) byconsidering a spin hydrodynamic approach based on balance equations directly derived from a spin-dependentBoltzmann equation. We determine the spin-polarization landscapes (time and position) of the carrier population(n" ¡n#)=(n" +n#) and the current density ( j" ¡ j#)=( j" + j#). While in the uniformly-doped system thecarrier spin-polarization has a slow decay, in the non-uniformly doped system it shows a drastic fall down in theinterface. In contrast the current spin-polarization exhibits an enhancement for both of the systems particularlyin the interface. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436514 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3B Vol.36
title Transient Spin Dynamics in Semiconductors
topic Física, Astronomía y Matemáticas
Interfaces
Semiconductors
Electrical injection
Spin polarized transport
url https://www.redalyc.org/articulo.oa?id=46436514