Effects of In-Plane Magnetic Fields on the Electronic Cyclotron Effective Mass and Landé Factor in GaAs-(Ga,Al)As Quantum Wells
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| Format: | Artículo científico |
| Langue: | en |
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Sociedade Brasileira de Física
2006
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| _version_ | 1876450681418678272 |
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| author | E. Reyes-Gómez |
| author_facet | E. Reyes-Gómez |
| contents | Effects of In-Plane Magnetic Fields on the Electronic Cyclotron Effective Mass and Landé Factor in GaAs-(Ga,Al)As Quantum Wells E. Reyes-Gómez C. A. Perdomo Leiva L. E. Oliveira M. de Dios-Leyva Física, Astronomía y Matemáticas factor Quantum wells Magnetic fields Cyclotron effective mass The dependence of the electron Land´e g-factor on carrier confinement in quantum wells recently gained bothexperimental and theoretical interest. The g factor of electrons in GaAs-(Ga,Al)As quantum wells is of specialinterest, as it changes its sign at a certain value of the well width. In the present work, the effects of an in-planemagnetic field on the cyclotron effective mass and on the Land´e g?-factor in single GaAs-(Ga,Al)As quantumwells are studied. Theoretical calculations are performed in the framework of the effective-mass and nonparabolic-band approximations. The Ogg-McCombe Hamiltonian is used for the conduction-band electrons inthe semiconductor heterostructure, and the Land´e g?-factor theoretically evaluated is found in good agrementwith available experimental measurements. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436516 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3B Vol.36 |
| format | Artículo científico |
| id | redalyc_46436516 |
| institution | Redalyc |
| language | en |
| publishDate | 2006 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Effects of In-Plane Magnetic Fields on the Electronic Cyclotron Effective Mass and Landé Factor in GaAs-(Ga,Al)As Quantum Wells E. Reyes-Gómez Física, Astronomía y Matemáticas factor Quantum wells Magnetic fields Cyclotron effective mass Effects of In-Plane Magnetic Fields on the Electronic Cyclotron Effective Mass and Landé Factor in GaAs-(Ga,Al)As Quantum Wells E. Reyes-Gómez C. A. Perdomo Leiva L. E. Oliveira M. de Dios-Leyva Física, Astronomía y Matemáticas factor Quantum wells Magnetic fields Cyclotron effective mass The dependence of the electron Land´e g-factor on carrier confinement in quantum wells recently gained bothexperimental and theoretical interest. The g factor of electrons in GaAs-(Ga,Al)As quantum wells is of specialinterest, as it changes its sign at a certain value of the well width. In the present work, the effects of an in-planemagnetic field on the cyclotron effective mass and on the Land´e g?-factor in single GaAs-(Ga,Al)As quantumwells are studied. Theoretical calculations are performed in the framework of the effective-mass and nonparabolic-band approximations. The Ogg-McCombe Hamiltonian is used for the conduction-band electrons inthe semiconductor heterostructure, and the Land´e g?-factor theoretically evaluated is found in good agrementwith available experimental measurements. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436516 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3B Vol.36 |
| title | Effects of In-Plane Magnetic Fields on the Electronic Cyclotron Effective Mass and Landé Factor in GaAs-(Ga,Al)As Quantum Wells |
| topic | Física, Astronomía y Matemáticas factor Quantum wells Magnetic fields Cyclotron effective mass |
| url | https://www.redalyc.org/articulo.oa?id=46436516 |