Electronic States in n-Type GaAs Delta-Doped Quantum Wells Under Hydrostatic Pressure
Fuente:
Redalyc
Saved in:
| Main Author: | |
|---|---|
| Format: | Artículo científico |
| Language: | en |
| Published: |
Sociedade Brasileira de Física
2006
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1876477236354220032 |
|---|---|
| author | M. E. Mora-Ramos |
| author_facet | M. E. Mora-Ramos |
| contents | Electronic States in n-Type GaAs Delta-Doped Quantum Wells Under Hydrostatic Pressure M. E. Mora-Ramos C. A. Duque Física, Astronomía y Matemáticas GaAs Delta doping Hydrostatic pressure The calculation of the electronic energy levels of n-type d-doped quantum wells in a GaAs matrix is presented.The effects of hydrostatic pressure on the band structure are taken into account specially when the host materialbecomes an indirect gap one. The results suggest that under the applied pressure regime the GaAs can supporttwo-dimensional conduction channels associated to the delta-doping, with carrier densities exceeding 1013 cm¡2 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436518 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3B Vol.36 |
| format | Artículo científico |
| id | redalyc_46436518 |
| institution | Redalyc |
| language | en |
| publishDate | 2006 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Electronic States in n-Type GaAs Delta-Doped Quantum Wells Under Hydrostatic Pressure M. E. Mora-Ramos Física, Astronomía y Matemáticas GaAs Delta doping Hydrostatic pressure Electronic States in n-Type GaAs Delta-Doped Quantum Wells Under Hydrostatic Pressure M. E. Mora-Ramos C. A. Duque Física, Astronomía y Matemáticas GaAs Delta doping Hydrostatic pressure The calculation of the electronic energy levels of n-type d-doped quantum wells in a GaAs matrix is presented.The effects of hydrostatic pressure on the band structure are taken into account specially when the host materialbecomes an indirect gap one. The results suggest that under the applied pressure regime the GaAs can supporttwo-dimensional conduction channels associated to the delta-doping, with carrier densities exceeding 1013 cm¡2 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436518 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3B Vol.36 |
| title | Electronic States in n-Type GaAs Delta-Doped Quantum Wells Under Hydrostatic Pressure |
| topic | Física, Astronomía y Matemáticas GaAs Delta doping Hydrostatic pressure |
| url | https://www.redalyc.org/articulo.oa?id=46436518 |