Hydrostatic Pressure and Electric-field Effects on the Shallow Donor Impurity States in GaAs-Ga0.7Al0.3As Quantum-well Wires

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Main Author: N. Porras-Montenegro
Format: Artículo científico
Language:en
Published: Sociedade Brasileira de Física 2006
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_version_ 1876422387897991168
author N. Porras-Montenegro
author_facet N. Porras-Montenegro
contents Hydrostatic Pressure and Electric-field Effects on the Shallow Donor Impurity States in GaAs-Ga0.7Al0.3As Quantum-well Wires N. Porras-Montenegro J. W. González C. A. Duque Física, Astronomía y Matemáticas Electric field Quantum well wire Hydrostatic pressure Using a variational procedure within the effective-mass approximation, we have made a theoretical study ofthe effects of hydrostatic pressure and applied electric fields on the binding energy of a shallow-donor impurityin square-transversal section GaAs-Ga0:7Al0:3As quantum-well wires. The electric field is applied in a planeof the transversal section of the wire and many angular directions are considered. The hydrostatic pressure hasbeen considered both in the direct and indirect gap regime for the Ga0:7Al0:3As material. For the potential barrierthat defines the wire region, we consider an x-dependent finite and y-dependent infinite model. The results wepresent are for the impurity binding energy and considering different values of the wire dimensions, hydrostaticpressure, applied electric field, and the impurity position in the transversal section of the wire. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436539 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3B Vol.36
format Artículo científico
id redalyc_46436539
institution Redalyc
language en
publishDate 2006
publisher Sociedade Brasileira de Física
spellingShingle Hydrostatic Pressure and Electric-field Effects on the Shallow Donor Impurity States in GaAs-Ga0.7Al0.3As Quantum-well Wires
N. Porras-Montenegro
Física, Astronomía y Matemáticas
Electric field
Quantum well wire
Hydrostatic pressure
Hydrostatic Pressure and Electric-field Effects on the Shallow Donor Impurity States in GaAs-Ga0.7Al0.3As Quantum-well Wires N. Porras-Montenegro J. W. González C. A. Duque Física, Astronomía y Matemáticas Electric field Quantum well wire Hydrostatic pressure Using a variational procedure within the effective-mass approximation, we have made a theoretical study ofthe effects of hydrostatic pressure and applied electric fields on the binding energy of a shallow-donor impurityin square-transversal section GaAs-Ga0:7Al0:3As quantum-well wires. The electric field is applied in a planeof the transversal section of the wire and many angular directions are considered. The hydrostatic pressure hasbeen considered both in the direct and indirect gap regime for the Ga0:7Al0:3As material. For the potential barrierthat defines the wire region, we consider an x-dependent finite and y-dependent infinite model. The results wepresent are for the impurity binding energy and considering different values of the wire dimensions, hydrostaticpressure, applied electric field, and the impurity position in the transversal section of the wire. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436539 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3B Vol.36
title Hydrostatic Pressure and Electric-field Effects on the Shallow Donor Impurity States in GaAs-Ga0.7Al0.3As Quantum-well Wires
topic Física, Astronomía y Matemáticas
Electric field
Quantum well wire
Hydrostatic pressure
url https://www.redalyc.org/articulo.oa?id=46436539