Thin-film ZnO/CdS/CuIn1-xGaxSe2 Solar Cells: Anomalous Physical Properties of the CuIn1-xGaxSe2 Absorber
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| Format: | Artículo científico |
| Sprache: | en |
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Sociedade Brasileira de Física
2006
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| _version_ | 1876458130625265664 |
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| author | Clas Persson |
| author_facet | Clas Persson |
| contents | Thin-film ZnO/CdS/CuIn1-xGaxSe2 Solar Cells: Anomalous Physical Properties of the CuIn1-xGaxSe2 Absorber Clas Persson Física, Astronomía y Matemáticas CuInSe2 Surface Defects Absorbers Interface Thin-film ZnO/CdS/CuIn1¡xGaxSe2 solar cells are manufactured with »20% solar-cell conversion efficiency.The CuIn1¡xGaxSe2 (CIGS) absorber exhibits rather different physical properties compared with conventionalsemiconductors (e.g. Si, GaAs and ZnSe). For instance, (i) the valence-band maximum in CIGS consists ofcation-danion-p hybridized states. (ii) Cation vacancies have low formation energies and high mobility atroom temperature. (iii) The most stable surface of CuIn1¡xGaxSe2 is the reconstructed, and otherwise polar,(112) surface. (iv) Solar cells with absorbers containing grain-boundaries outperform cells with crystallineabsorbers. In this work, the fundamental physical properties of CIGS, like the electronic structure, the defectformation energies, as well as surface properties are discussed from a theoretical perspective. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436540 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3B Vol.36 |
| format | Artículo científico |
| id | redalyc_46436540 |
| institution | Redalyc |
| language | en |
| publishDate | 2006 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Thin-film ZnO/CdS/CuIn1-xGaxSe2 Solar Cells: Anomalous Physical Properties of the CuIn1-xGaxSe2 Absorber Clas Persson Física, Astronomía y Matemáticas CuInSe2 Surface Defects Absorbers Interface Thin-film ZnO/CdS/CuIn1-xGaxSe2 Solar Cells: Anomalous Physical Properties of the CuIn1-xGaxSe2 Absorber Clas Persson Física, Astronomía y Matemáticas CuInSe2 Surface Defects Absorbers Interface Thin-film ZnO/CdS/CuIn1¡xGaxSe2 solar cells are manufactured with »20% solar-cell conversion efficiency.The CuIn1¡xGaxSe2 (CIGS) absorber exhibits rather different physical properties compared with conventionalsemiconductors (e.g. Si, GaAs and ZnSe). For instance, (i) the valence-band maximum in CIGS consists ofcation-danion-p hybridized states. (ii) Cation vacancies have low formation energies and high mobility atroom temperature. (iii) The most stable surface of CuIn1¡xGaxSe2 is the reconstructed, and otherwise polar,(112) surface. (iv) Solar cells with absorbers containing grain-boundaries outperform cells with crystallineabsorbers. In this work, the fundamental physical properties of CIGS, like the electronic structure, the defectformation energies, as well as surface properties are discussed from a theoretical perspective. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436540 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3B Vol.36 |
| title | Thin-film ZnO/CdS/CuIn1-xGaxSe2 Solar Cells: Anomalous Physical Properties of the CuIn1-xGaxSe2 Absorber |
| topic | Física, Astronomía y Matemáticas CuInSe2 Surface Defects Absorbers Interface |
| url | https://www.redalyc.org/articulo.oa?id=46436540 |