Nanocrystalline GaN and GaN:H Films Grown by RF-Magnetron Sputtering
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| Format: | Artículo científico |
| Sprache: | en |
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Sociedade Brasileira de Física
2006
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| _version_ | 1876437385167765504 |
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| author | D. M. G. Leite |
| author_facet | D. M. G. Leite |
| contents | Nanocrystalline GaN and GaN:H Films Grown by RF-Magnetron Sputtering D. M. G. Leite A. L. J. Pereira L. F. da Silva J. H. Dias da Silva Física, Astronomía y Matemáticas GaN GaN:H Sputtering Hydrogenation Nanocrystalline The structural and optical properties of nanocrystalline GaN and GaN:H films grown by RF-magnetronsputtering are focused here. The films were grown using a Ga target and a variety of deposition parameters(N2/H2/Arflow rates, RF power, and substrate temperatures). Si (100) and fused silica substrates were used atrelatively low temperatures (Ts ≤ 420K). The main effects resulting from the deposition parameters variationson the films properties were related to the presence of hydrogen in the plasma. The X-ray diffraction analysis indicatesthat the grain sizes (∼15nm) and the crystallized volume fraction significantly decrease when hydrogenis present in the plasma. The optical absorption experiments indicate that the hydrogenated films have absorptionedges very similar to that of GaN single crystal films reported in the literature, while the non-hydrogenatedsamples present larger absorption tails encroaching into the gap energies. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436548 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3B Vol.36 |
| format | Artículo científico |
| id | redalyc_46436548 |
| institution | Redalyc |
| language | en |
| publishDate | 2006 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Nanocrystalline GaN and GaN:H Films Grown by RF-Magnetron Sputtering D. M. G. Leite Física, Astronomía y Matemáticas GaN GaN:H Sputtering Hydrogenation Nanocrystalline Nanocrystalline GaN and GaN:H Films Grown by RF-Magnetron Sputtering D. M. G. Leite A. L. J. Pereira L. F. da Silva J. H. Dias da Silva Física, Astronomía y Matemáticas GaN GaN:H Sputtering Hydrogenation Nanocrystalline The structural and optical properties of nanocrystalline GaN and GaN:H films grown by RF-magnetronsputtering are focused here. The films were grown using a Ga target and a variety of deposition parameters(N2/H2/Arflow rates, RF power, and substrate temperatures). Si (100) and fused silica substrates were used atrelatively low temperatures (Ts ≤ 420K). The main effects resulting from the deposition parameters variationson the films properties were related to the presence of hydrogen in the plasma. The X-ray diffraction analysis indicatesthat the grain sizes (∼15nm) and the crystallized volume fraction significantly decrease when hydrogenis present in the plasma. The optical absorption experiments indicate that the hydrogenated films have absorptionedges very similar to that of GaN single crystal films reported in the literature, while the non-hydrogenatedsamples present larger absorption tails encroaching into the gap energies. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436548 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3B Vol.36 |
| title | Nanocrystalline GaN and GaN:H Films Grown by RF-Magnetron Sputtering |
| topic | Física, Astronomía y Matemáticas GaN GaN:H Sputtering Hydrogenation Nanocrystalline |
| url | https://www.redalyc.org/articulo.oa?id=46436548 |