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| Format: | Artículo científico |
| Language: | en |
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Sociedade Brasileira de Física
2006
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| Online Access: | https://www.redalyc.org/articulo.oa?id=46436549 |
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Table of Contents:
- Electrical and Morphological Properties of Low Resistivity Mo thin Films Prepared by Magnetron Sputtering G. Gordillo F. Mesa C. Calderón Física, Astronomía y Matemáticas Mo CIGS Thin films Solar cells Low resistivity Mo thin films have been deposited using a DC magnetron sputtering system with an S-gun configurationelectrode and characterized electrically and morphologically. The influence of the sputtering gas pressure andglow discharge (GD) power, on the electrical resistivity of Mo thin films and on the contact resistivity of Moto Cu(In,Ga)Se2 (CIGS) films was determined through an exhaustive parameter study. This study also allowedus to find the conditions to deposit Mo films with suitable properties for its use as back contact of solar cellsbased on CIGS. Resistivities smaller than 1x10−4 Ω.cm and contact resistivities smaller than 0.3 Ωcm2 werefound. Mo films with these characteristics are suitable for back contacts in solar cells based on CIGS. It wasalso found that the Mo thin films, deposited by DC magnetron sputtering on CIGS thin films, act effectivelyas ohmic contacts. The main contribution of this work was to obtain Mo thin films with adequate propertiesto be used as back contact for CIGS based solar cells using a DC sputtering system with S-gun configurationelectrode, which allows growing the film with better surface quality and at a higher deposition rate than thosedeposited using the conventional planar RF sputtering system. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436549 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3B Vol.36