Oxygen Ion Implantation in Strontium Bismuth Tantalate Thin Films
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| Format: | Artículo científico |
| Language: | en |
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Sociedade Brasileira de Física
2006
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| _version_ | 1876441582766391296 |
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| author | B. J. Gómez |
| author_facet | B. J. Gómez |
| contents | Oxygen Ion Implantation in Strontium Bismuth Tantalate Thin Films B. J. Gómez O. de Sanctis L. Rico M. Stachiotti N. Pellegri J. N. Feugeas Física, Astronomía y Matemáticas SBT Thin films Plasma focus Ferroelectric Oxygen implantation Strontium Bismuth Tantalate (SBT) ferroelectric thin films have attracted considerable attention for the developmentof non-volatile ferroelectric random access memories (NV-FRAMs). These films, however, have acritical problem: a high processing temperature (>700oC) is required for the crystallization of the perovskitephase. The thermal evolution of the SBT films prepared by Chemical Solution Deposition (CSD) techniquesshowed the formation of an intermediate oxygen-deficient fluorite phase at »550oC. The SBT perovskite phasecrystallizes at higher temperatures. To favor an earlier perovskite crystallization, SBT thin films were implantedwith oxygen ions pulses produced by a Plasma Focus (1 kJ). The samples were annealed at different temperaturesin oxygen atmosphere and characterized by GI-XRD and Atomic Force Microscopy techniques. It wasfound that oxygen addition into the SBT structure promotes a better crystallization of the perovskite phase. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436556 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3B Vol.36 |
| format | Artículo científico |
| id | redalyc_46436556 |
| institution | Redalyc |
| language | en |
| publishDate | 2006 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Oxygen Ion Implantation in Strontium Bismuth Tantalate Thin Films B. J. Gómez Física, Astronomía y Matemáticas SBT Thin films Plasma focus Ferroelectric Oxygen implantation Oxygen Ion Implantation in Strontium Bismuth Tantalate Thin Films B. J. Gómez O. de Sanctis L. Rico M. Stachiotti N. Pellegri J. N. Feugeas Física, Astronomía y Matemáticas SBT Thin films Plasma focus Ferroelectric Oxygen implantation Strontium Bismuth Tantalate (SBT) ferroelectric thin films have attracted considerable attention for the developmentof non-volatile ferroelectric random access memories (NV-FRAMs). These films, however, have acritical problem: a high processing temperature (>700oC) is required for the crystallization of the perovskitephase. The thermal evolution of the SBT films prepared by Chemical Solution Deposition (CSD) techniquesshowed the formation of an intermediate oxygen-deficient fluorite phase at »550oC. The SBT perovskite phasecrystallizes at higher temperatures. To favor an earlier perovskite crystallization, SBT thin films were implantedwith oxygen ions pulses produced by a Plasma Focus (1 kJ). The samples were annealed at different temperaturesin oxygen atmosphere and characterized by GI-XRD and Atomic Force Microscopy techniques. It wasfound that oxygen addition into the SBT structure promotes a better crystallization of the perovskite phase. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436556 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3B Vol.36 |
| title | Oxygen Ion Implantation in Strontium Bismuth Tantalate Thin Films |
| topic | Física, Astronomía y Matemáticas SBT Thin films Plasma focus Ferroelectric Oxygen implantation |
| url | https://www.redalyc.org/articulo.oa?id=46436556 |