Influence of the Current Density and Resistivity on the Optical Properties of P-Type Porous Silicon Thin Films Fabricated by the Electrochemical Anodizing Method
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| Format: | Artículo científico |
| Sprache: | en |
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Sociedade Brasileira de Física
2006
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| _version_ | 1876465060443848704 |
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| author | F. Castillejo |
| author_facet | F. Castillejo |
| contents | Influence of the Current Density and Resistivity on the Optical Properties of P-Type Porous Silicon Thin Films Fabricated by the Electrochemical Anodizing Method F. Castillejo J. Torres J. E. Alfonso Física, Astronomía y Matemáticas Reflectance Porous silicon Photoluminescence Optical properties Optical absorption Porous Silicon thin films were produced in this work by the electrochemical anodizing method. The sampleswere fabricated anodizing p type Si substrates with different resistivities in hydrofluoric acid. Samples wereprepared at different current densities. The films were characterized through reflectance and room photoluminescence(PL) measurements in the visible region. A simple theoretical model is proposed to calculate theOptical constants of the material using a theoretical simulation of the reflectance spectra. The maximum positionsof PL signals are shifted to long wavelengths as the porosity increase in samples prepared with substratesof resistivities of 0.1 and 1 W-cm, while an opposite behaviour is observed in samples prepared on more dopedsubstrates. The optical constants obtained through the calculation are the spectral variation of the refractiveindex and extinction coefficient, also are obtained the sample thickness and surface roughness. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436559 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3B Vol.36 |
| format | Artículo científico |
| id | redalyc_46436559 |
| institution | Redalyc |
| language | en |
| publishDate | 2006 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Influence of the Current Density and Resistivity on the Optical Properties of P-Type Porous Silicon Thin Films Fabricated by the Electrochemical Anodizing Method F. Castillejo Física, Astronomía y Matemáticas Reflectance Porous silicon Photoluminescence Optical properties Optical absorption Influence of the Current Density and Resistivity on the Optical Properties of P-Type Porous Silicon Thin Films Fabricated by the Electrochemical Anodizing Method F. Castillejo J. Torres J. E. Alfonso Física, Astronomía y Matemáticas Reflectance Porous silicon Photoluminescence Optical properties Optical absorption Porous Silicon thin films were produced in this work by the electrochemical anodizing method. The sampleswere fabricated anodizing p type Si substrates with different resistivities in hydrofluoric acid. Samples wereprepared at different current densities. The films were characterized through reflectance and room photoluminescence(PL) measurements in the visible region. A simple theoretical model is proposed to calculate theOptical constants of the material using a theoretical simulation of the reflectance spectra. The maximum positionsof PL signals are shifted to long wavelengths as the porosity increase in samples prepared with substratesof resistivities of 0.1 and 1 W-cm, while an opposite behaviour is observed in samples prepared on more dopedsubstrates. The optical constants obtained through the calculation are the spectral variation of the refractiveindex and extinction coefficient, also are obtained the sample thickness and surface roughness. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436559 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3B Vol.36 |
| title | Influence of the Current Density and Resistivity on the Optical Properties of P-Type Porous Silicon Thin Films Fabricated by the Electrochemical Anodizing Method |
| topic | Física, Astronomía y Matemáticas Reflectance Porous silicon Photoluminescence Optical properties Optical absorption |
| url | https://www.redalyc.org/articulo.oa?id=46436559 |