Correlated Electron-Hole Transitions in Bulk GaAs and GaAs-(Ga,Al)As QuantumWells: Effects of Applied Electric and In-Plane Magnetic Fields
Fuente:
Redalyc
Guardado en:
| Autor principal: | |
|---|---|
| Formato: | Artículo científico |
| Lenguaje: | en |
| Publicado: |
Sociedade Brasileira de Física
2006
|
| Materias: | |
| Acceso en línea: | |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| _version_ | 1876450778669907968 |
|---|---|
| author | C. A. Duque |
| author_facet | C. A. Duque |
| contents | Correlated Electron-Hole Transitions in Bulk GaAs and GaAs-(Ga,Al)As QuantumWells: Effects of Applied Electric and In-Plane Magnetic Fields C. A. Duque L. E. Oliveira M. de Dios-Leyva Física, Astronomía y Matemáticas Quantum well Magnetic field Electric field Exciton transitions The effects of crossed electric and magnetic fields on the electronic and exciton properties in semiconductorheterostructures have been investigated within the effective-mass and parabolic band approximations for bothbulk GaAs and GaAs-Ga1¡xAlxAs quantum wells. The combined effects on the heterostructure properties ofthe applied crossed electric/magnetic fields together with the direct coupling between the exciton center of massand internal exciton motions may be dealt with via a simple parameter representing the distance between theelectron and hole magnetic parabolas. Calculations lead to the expected behavior for the exciton dispersion in awide range of the crossed electric/magnetic fields, and present theoretical results are found in good agreementwith available experimental measurements. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436564 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3B Vol.36 |
| format | Artículo científico |
| id | redalyc_46436564 |
| institution | Redalyc |
| language | en |
| publishDate | 2006 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Correlated Electron-Hole Transitions in Bulk GaAs and GaAs-(Ga,Al)As QuantumWells: Effects of Applied Electric and In-Plane Magnetic Fields C. A. Duque Física, Astronomía y Matemáticas Quantum well Magnetic field Electric field Exciton transitions Correlated Electron-Hole Transitions in Bulk GaAs and GaAs-(Ga,Al)As QuantumWells: Effects of Applied Electric and In-Plane Magnetic Fields C. A. Duque L. E. Oliveira M. de Dios-Leyva Física, Astronomía y Matemáticas Quantum well Magnetic field Electric field Exciton transitions The effects of crossed electric and magnetic fields on the electronic and exciton properties in semiconductorheterostructures have been investigated within the effective-mass and parabolic band approximations for bothbulk GaAs and GaAs-Ga1¡xAlxAs quantum wells. The combined effects on the heterostructure properties ofthe applied crossed electric/magnetic fields together with the direct coupling between the exciton center of massand internal exciton motions may be dealt with via a simple parameter representing the distance between theelectron and hole magnetic parabolas. Calculations lead to the expected behavior for the exciton dispersion in awide range of the crossed electric/magnetic fields, and present theoretical results are found in good agreementwith available experimental measurements. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436564 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3B Vol.36 |
| title | Correlated Electron-Hole Transitions in Bulk GaAs and GaAs-(Ga,Al)As QuantumWells: Effects of Applied Electric and In-Plane Magnetic Fields |
| topic | Física, Astronomía y Matemáticas Quantum well Magnetic field Electric field Exciton transitions |
| url | https://www.redalyc.org/articulo.oa?id=46436564 |