Phase Identification and AES Depth Profile Analysis of Cu(In,Ga)Se2 Thin Films
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| Natura: | Artículo científico |
| Lingua: | en |
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Sociedade Brasileira de Física
2006
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| _version_ | 1876474647350870016 |
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| author | F. Mesa |
| author_facet | F. Mesa |
| contents | Phase Identification and AES Depth Profile Analysis of Cu(In,Ga)Se2 Thin Films F. Mesa E. Romero C. Calderón P. Bartolo-Pérez G. Gordillo Física, Astronomía y Matemáticas XRD AES CIGS Solar cells This work presents results related with phase identification and study of the homogeneity in the chemicalcomposition of Cu(In,Ga)Se2 (CIGS) thin films grown by a chemical reaction of the precursor species evaporatedsequentially on a soda-lime glass substrate, in a two or three-stage process. For that, the CIGS sampleswere characterized through X-ray diffraction (XRD) and Auger Electron Spectroscopy (AES) depth profile measurements,respectively. The presence of secondary phases growing superficially was identified through smallangle XRD measurements. Theoretical simulation of the XRD spectra, carried out with the help of the Powder-Cell package, confirmed this result. The results showed that the deposition conditions affect the homogeneityof the chemical composition of the CIGS films, as well as the phase in which these films grow. In general, thesamples grown in a two stage process present a mixture of the Cu(In,Ga)Se2 phase with the secondary In2Se3and Cu2Se phases, whereas, the films grown in a three stage process do it, mainly, in the Cu(In,Ga)Se2 phasewith a tetragonal (chalcopyrite type) structure and better homogeneity. CIGS films with characteristics likethose found for the three stage samples, have demonstrated good properties for its use as absorber layers in thinfilm solar cells. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436567 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3B Vol.36 |
| format | Artículo científico |
| id | redalyc_46436567 |
| institution | Redalyc |
| language | en |
| publishDate | 2006 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Phase Identification and AES Depth Profile Analysis of Cu(In,Ga)Se2 Thin Films F. Mesa Física, Astronomía y Matemáticas XRD AES CIGS Solar cells Phase Identification and AES Depth Profile Analysis of Cu(In,Ga)Se2 Thin Films F. Mesa E. Romero C. Calderón P. Bartolo-Pérez G. Gordillo Física, Astronomía y Matemáticas XRD AES CIGS Solar cells This work presents results related with phase identification and study of the homogeneity in the chemicalcomposition of Cu(In,Ga)Se2 (CIGS) thin films grown by a chemical reaction of the precursor species evaporatedsequentially on a soda-lime glass substrate, in a two or three-stage process. For that, the CIGS sampleswere characterized through X-ray diffraction (XRD) and Auger Electron Spectroscopy (AES) depth profile measurements,respectively. The presence of secondary phases growing superficially was identified through smallangle XRD measurements. Theoretical simulation of the XRD spectra, carried out with the help of the Powder-Cell package, confirmed this result. The results showed that the deposition conditions affect the homogeneityof the chemical composition of the CIGS films, as well as the phase in which these films grow. In general, thesamples grown in a two stage process present a mixture of the Cu(In,Ga)Se2 phase with the secondary In2Se3and Cu2Se phases, whereas, the films grown in a three stage process do it, mainly, in the Cu(In,Ga)Se2 phasewith a tetragonal (chalcopyrite type) structure and better homogeneity. CIGS films with characteristics likethose found for the three stage samples, have demonstrated good properties for its use as absorber layers in thinfilm solar cells. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436567 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3B Vol.36 |
| title | Phase Identification and AES Depth Profile Analysis of Cu(In,Ga)Se2 Thin Films |
| topic | Física, Astronomía y Matemáticas XRD AES CIGS Solar cells |
| url | https://www.redalyc.org/articulo.oa?id=46436567 |