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| Format: | Artículo científico |
| Language: | en |
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Sociedade Brasileira de Física
2006
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| Online Access: | https://www.redalyc.org/articulo.oa?id=46436571 |
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Table of Contents:
- Scaling Laws in PZT Thin Films Grown on Si(001) and Nb-Doped SrTiO3(001) Substrates W. Lopera A. Cortes J. G. Ramírez M. E. Gómez P. Prieto Física, Astronomía y Matemáticas PZT AFM Thin films Scaling laws A dynamic scaling and kinetic roughening study was done on digitized atomic force microscope (AFM) imagesof Pb(Zr0:52;Ti0:48)O3 (PZT) thin films. The films were grown on Si(001) and Nb¡SrTiO3(001) (STNO)substrates via rf-sputtering technique at high oxygen pressures at substrate temperatures of 600 oC by varyingthe deposition time and keeping other growth parameters fixed. By using a specific self-designed algorithm,we can extract from digitized 512-pixel resolution AFM-images, quantitative values of roughness parameters,i.e., interface width (s(`)), lateral correlation length (xjj) and, roughness exponent (a). Herein, we report onthe sputter-time deposition dependence of the parameters describing roughness for both kinds of substrates. Wereport a-values for different time depositions (between 15 and 60 minutes) close to 0:55 for Si substrates and0:63 for Nb¡SrTiO3 substrates, indicating that the surface becomes more correlated in STNO substrates. Thea-values are associated to the Lai-Das-Sarma-Villain model. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436571 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3B Vol.36