Surface Morphology Analysis of GaInAsSb Films Grown by Liquid Phase Epitaxy
Fuente:
Redalyc
Saved in:
| Main Author: | |
|---|---|
| Format: | Artículo científico |
| Language: | en |
| Published: |
Sociedade Brasileira de Física
2006
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1876476795131265024 |
|---|---|
| author | J. G. Ramírez |
| author_facet | J. G. Ramírez |
| contents | Surface Morphology Analysis of GaInAsSb Films Grown by Liquid Phase Epitaxy J. G. Ramírez L. Tirado-Mejía H. Ariza-Calderón M. E. Gómez Física, Astronomía y Matemáticas Surface structure Liquid phase epitaxy Quaternary semiconductors We studied growth mechanisms in semiconducting Ga1¡xInxAsySb1¡y films grown by liquid phase epitaxyon (100) GaSb:Te (1017 cm¡3) substrates at 600 ° C solution-substrate temperature. Atomic Force Microscopy(AFM) images of these films show step-like corrugations, undulations, grooves, and terraces. The terracesare a few nm in height and hundreds of nanometers in length. Epitaxial Ga1¡xInxAsySb1¡y films grow latticematchedto the (100) GaSb substrates. These narrow-gap quaternary Ga1¡xInxAsySb1¡y compounds are suitablematerials for heterostructure devices operating in the infrared wavelength range. The estimated x and y valuesare in the GaSb-rich zone. The step-like corrugations (bunching steps) are formed by different mechanisms,such as pinning effect probably due to impurities on the substrate surface. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436572 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3B Vol.36 |
| format | Artículo científico |
| id | redalyc_46436572 |
| institution | Redalyc |
| language | en |
| publishDate | 2006 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Surface Morphology Analysis of GaInAsSb Films Grown by Liquid Phase Epitaxy J. G. Ramírez Física, Astronomía y Matemáticas Surface structure Liquid phase epitaxy Quaternary semiconductors Surface Morphology Analysis of GaInAsSb Films Grown by Liquid Phase Epitaxy J. G. Ramírez L. Tirado-Mejía H. Ariza-Calderón M. E. Gómez Física, Astronomía y Matemáticas Surface structure Liquid phase epitaxy Quaternary semiconductors We studied growth mechanisms in semiconducting Ga1¡xInxAsySb1¡y films grown by liquid phase epitaxyon (100) GaSb:Te (1017 cm¡3) substrates at 600 ° C solution-substrate temperature. Atomic Force Microscopy(AFM) images of these films show step-like corrugations, undulations, grooves, and terraces. The terracesare a few nm in height and hundreds of nanometers in length. Epitaxial Ga1¡xInxAsySb1¡y films grow latticematchedto the (100) GaSb substrates. These narrow-gap quaternary Ga1¡xInxAsySb1¡y compounds are suitablematerials for heterostructure devices operating in the infrared wavelength range. The estimated x and y valuesare in the GaSb-rich zone. The step-like corrugations (bunching steps) are formed by different mechanisms,such as pinning effect probably due to impurities on the substrate surface. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436572 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3B Vol.36 |
| title | Surface Morphology Analysis of GaInAsSb Films Grown by Liquid Phase Epitaxy |
| topic | Física, Astronomía y Matemáticas Surface structure Liquid phase epitaxy Quaternary semiconductors |
| url | https://www.redalyc.org/articulo.oa?id=46436572 |