Optical and Electrical Properties of Te Doped AlGaAsSb/AlAsSb Bragg Mirrors on InP
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| Format: | Artículo científico |
| Language: | en |
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Sociedade Brasileira de Física
2006
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| _version_ | 1876453734574194688 |
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| author | D. O. Toginho Filho |
| author_facet | D. O. Toginho Filho |
| contents | Optical and Electrical Properties of Te Doped AlGaAsSb/AlAsSb Bragg Mirrors on InP D. O. Toginho Filho I. F. L. Dias J. L. Duarte E. Laureto Jean C. Harmand Física, Astronomía y Matemáticas AlGaAs AlAsSb Bragg mirror Semiconductor We present a comparative study carried out on the optical and electrical characteristics of undoped and Tedoped AlGaAsSb/AlAsSb Bragg mirrors with 6.5 pairs of layers and bulk undoped and Te doped AlGaAsSbepilayers alloys lattice matched on InP, grown by molecular beam epitaxy, using SIMS, photoluminescence,reflectivity and IxV techniques. The temperature dependence of PL transitions observed in the Bragg mirrorsare similar to that observed in bulk samples and associated with the donor and acceptor recombinations in alloyswith electrostatic potential fluctuations described by quasi-donor-acceptor-pair (QDAP) models. We verifiedby SIMS the presence of a macro fluctuation in the Te profile concentrations in the growth direction of thedoped Bragg mirror. The influence of doping, alloy and macrofluctuation of incorporated Te on the optical andelectrical properties of doped Bragg mirror is analyzed. The AlGaAs/AlAsSb seems a very attractive option forVCSEL technology. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436623 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.4A Vol.36 |
| format | Artículo científico |
| id | redalyc_46436623 |
| institution | Redalyc |
| language | en |
| publishDate | 2006 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Optical and Electrical Properties of Te Doped AlGaAsSb/AlAsSb Bragg Mirrors on InP D. O. Toginho Filho Física, Astronomía y Matemáticas AlGaAs AlAsSb Bragg mirror Semiconductor Optical and Electrical Properties of Te Doped AlGaAsSb/AlAsSb Bragg Mirrors on InP D. O. Toginho Filho I. F. L. Dias J. L. Duarte E. Laureto Jean C. Harmand Física, Astronomía y Matemáticas AlGaAs AlAsSb Bragg mirror Semiconductor We present a comparative study carried out on the optical and electrical characteristics of undoped and Tedoped AlGaAsSb/AlAsSb Bragg mirrors with 6.5 pairs of layers and bulk undoped and Te doped AlGaAsSbepilayers alloys lattice matched on InP, grown by molecular beam epitaxy, using SIMS, photoluminescence,reflectivity and IxV techniques. The temperature dependence of PL transitions observed in the Bragg mirrorsare similar to that observed in bulk samples and associated with the donor and acceptor recombinations in alloyswith electrostatic potential fluctuations described by quasi-donor-acceptor-pair (QDAP) models. We verifiedby SIMS the presence of a macro fluctuation in the Te profile concentrations in the growth direction of thedoped Bragg mirror. The influence of doping, alloy and macrofluctuation of incorporated Te on the optical andelectrical properties of doped Bragg mirror is analyzed. The AlGaAs/AlAsSb seems a very attractive option forVCSEL technology. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436623 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.4A Vol.36 |
| title | Optical and Electrical Properties of Te Doped AlGaAsSb/AlAsSb Bragg Mirrors on InP |
| topic | Física, Astronomía y Matemáticas AlGaAs AlAsSb Bragg mirror Semiconductor |
| url | https://www.redalyc.org/articulo.oa?id=46436623 |