Four-Point Probe Electrical Measurements on p-n-p InP Structures
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| Format: | Artículo científico |
| Sprache: | en |
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Sociedade Brasileira de Física
2007
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| _version_ | 1876423808225640448 |
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| author | C. A. C. Sequeira |
| author_facet | C. A. C. Sequeira |
| contents | Four-Point Probe Electrical Measurements on p-n-p InP Structures C. A. C. Sequeira D. M. F. Santos Física, Astronomía y Matemáticas Four Zinc diffusion Indium phosphide Impurity profiles point probe technique The diffusion of zinc into n-type InP has been studied by four-point probe electrical measurements on homogeneouslydoped crystals at 750 oC. The zinc carrier concentration in the diffused layer was approximately 3 x1018 cm−3 and its mobility was assumed to be about 40 cm2 V−1 s−1. It was observed that the concentration offree carriers throughout the entire diffused region is always less than the number of introduced impurity atoms.Possible reasons are discussed to explain the observed differences. Moreover this non-correlation phenomenondid provide substantial backing to the Hall Effect and C-V measurements that are being carried out to furtheranalyse the Zn-InP diffused layer. 2007 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46437702 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3B Vol.37 |
| format | Artículo científico |
| id | redalyc_46437702 |
| institution | Redalyc |
| language | en |
| publishDate | 2007 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Four-Point Probe Electrical Measurements on p-n-p InP Structures C. A. C. Sequeira Física, Astronomía y Matemáticas Four Zinc diffusion Indium phosphide Impurity profiles point probe technique Four-Point Probe Electrical Measurements on p-n-p InP Structures C. A. C. Sequeira D. M. F. Santos Física, Astronomía y Matemáticas Four Zinc diffusion Indium phosphide Impurity profiles point probe technique The diffusion of zinc into n-type InP has been studied by four-point probe electrical measurements on homogeneouslydoped crystals at 750 oC. The zinc carrier concentration in the diffused layer was approximately 3 x1018 cm−3 and its mobility was assumed to be about 40 cm2 V−1 s−1. It was observed that the concentration offree carriers throughout the entire diffused region is always less than the number of introduced impurity atoms.Possible reasons are discussed to explain the observed differences. Moreover this non-correlation phenomenondid provide substantial backing to the Hall Effect and C-V measurements that are being carried out to furtheranalyse the Zn-InP diffused layer. 2007 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46437702 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3B Vol.37 |
| title | Four-Point Probe Electrical Measurements on p-n-p InP Structures |
| topic | Física, Astronomía y Matemáticas Four Zinc diffusion Indium phosphide Impurity profiles point probe technique |
| url | https://www.redalyc.org/articulo.oa?id=46437702 |