Temperature-Dependent Photoluminescence Spectra of GaAsSb/AlGaAs and GaAsSbN/GaAs Single Quantum Wells under Different Excitation Intensities

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Main Author: V. M. Aquino
Format: Artículo científico
Language:en
Published: Sociedade Brasileira de Física 2007
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author V. M. Aquino
author_facet V. M. Aquino
contents Temperature-Dependent Photoluminescence Spectra of GaAsSb/AlGaAs and GaAsSbN/GaAs Single Quantum Wells under Different Excitation Intensities V. M. Aquino J. C. Harmand S. A. Lourenço I. F. L. Dias J. L. Duarte E. Laureto Física, Astronomía y Matemáticas Diluted III Quantum wells V semiconductors Photoluminescece Exciton localization The mechanism for low-temperature photoluminescence (PL) emissions in GaAsSb/AlGaAs andGaAsSbN/GaAs strained-layer single quantum wells (SQWs), grown by molecular-beam epitaxy, is studied indetail, using PL spectroscopy as a function of temperature and excitation intensity. In all samples, the PL peakenergy as well as the full width at half maximum (FWHM), as a function of temperature, present anomalousbehaviors, i:e., the PL peak energy shows a successive red/blue/redshift (S-shaped behavior) and the FWHMshows a successive blue/red/blueshift (“inverted S-shaped curve”) with increasing temperature. At sufficientlylow excitation intensity and in a narrow temperature interval (50 – 80 K), the nitrogen-containing samplespresent two clear competitive PL peaks. The low-energy PL mechanism (8 – 80 K) is dominated by localizedPL transitions, while the high-energy PL mechanism is dominated by the ground state (e1-hh1) PL transition.Additionally, these PL peaks show different temperature dependence with the low-energy PL peak, showinga stronger redshift than the high-energy PL peak. A competition process between localized and delocalizedexcitons is used to discuss these PL properties 2007 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46437804 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.4 Vol.37
format Artículo científico
id redalyc_46437804
language en
publishDate 2007
publisher Sociedade Brasileira de Física
spellingShingle Temperature-Dependent Photoluminescence Spectra of GaAsSb/AlGaAs and GaAsSbN/GaAs Single Quantum Wells under Different Excitation Intensities
V. M. Aquino
Física, Astronomía y Matemáticas
Diluted III
Quantum wells
V semiconductors
Photoluminescece
Exciton localization
Temperature-Dependent Photoluminescence Spectra of GaAsSb/AlGaAs and GaAsSbN/GaAs Single Quantum Wells under Different Excitation Intensities V. M. Aquino J. C. Harmand S. A. Lourenço I. F. L. Dias J. L. Duarte E. Laureto Física, Astronomía y Matemáticas Diluted III Quantum wells V semiconductors Photoluminescece Exciton localization The mechanism for low-temperature photoluminescence (PL) emissions in GaAsSb/AlGaAs andGaAsSbN/GaAs strained-layer single quantum wells (SQWs), grown by molecular-beam epitaxy, is studied indetail, using PL spectroscopy as a function of temperature and excitation intensity. In all samples, the PL peakenergy as well as the full width at half maximum (FWHM), as a function of temperature, present anomalousbehaviors, i:e., the PL peak energy shows a successive red/blue/redshift (S-shaped behavior) and the FWHMshows a successive blue/red/blueshift (“inverted S-shaped curve”) with increasing temperature. At sufficientlylow excitation intensity and in a narrow temperature interval (50 – 80 K), the nitrogen-containing samplespresent two clear competitive PL peaks. The low-energy PL mechanism (8 – 80 K) is dominated by localizedPL transitions, while the high-energy PL mechanism is dominated by the ground state (e1-hh1) PL transition.Additionally, these PL peaks show different temperature dependence with the low-energy PL peak, showinga stronger redshift than the high-energy PL peak. A competition process between localized and delocalizedexcitons is used to discuss these PL properties 2007 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46437804 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.4 Vol.37
title Temperature-Dependent Photoluminescence Spectra of GaAsSb/AlGaAs and GaAsSbN/GaAs Single Quantum Wells under Different Excitation Intensities
topic Física, Astronomía y Matemáticas
Diluted III
Quantum wells
V semiconductors
Photoluminescece
Exciton localization
url https://www.redalyc.org/articulo.oa?id=46437804