Temperature-Dependent Photoluminescence Spectra of GaAsSb/AlGaAs and GaAsSbN/GaAs Single Quantum Wells under Different Excitation Intensities
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| Format: | Artículo científico |
| Language: | en |
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Sociedade Brasileira de Física
2007
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| _version_ | 1866558044968583168 |
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| author | V. M. Aquino |
| author_facet | V. M. Aquino |
| contents | Temperature-Dependent Photoluminescence Spectra of GaAsSb/AlGaAs and GaAsSbN/GaAs Single Quantum Wells under Different Excitation Intensities V. M. Aquino J. C. Harmand S. A. Lourenço I. F. L. Dias J. L. Duarte E. Laureto Física, Astronomía y Matemáticas Diluted III Quantum wells V semiconductors Photoluminescece Exciton localization The mechanism for low-temperature photoluminescence (PL) emissions in GaAsSb/AlGaAs andGaAsSbN/GaAs strained-layer single quantum wells (SQWs), grown by molecular-beam epitaxy, is studied indetail, using PL spectroscopy as a function of temperature and excitation intensity. In all samples, the PL peakenergy as well as the full width at half maximum (FWHM), as a function of temperature, present anomalousbehaviors, i:e., the PL peak energy shows a successive red/blue/redshift (S-shaped behavior) and the FWHMshows a successive blue/red/blueshift (inverted S-shaped curve) with increasing temperature. At sufficientlylow excitation intensity and in a narrow temperature interval (50 80 K), the nitrogen-containing samplespresent two clear competitive PL peaks. The low-energy PL mechanism (8 80 K) is dominated by localizedPL transitions, while the high-energy PL mechanism is dominated by the ground state (e1-hh1) PL transition.Additionally, these PL peaks show different temperature dependence with the low-energy PL peak, showinga stronger redshift than the high-energy PL peak. A competition process between localized and delocalizedexcitons is used to discuss these PL properties 2007 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46437804 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.4 Vol.37 |
| format | Artículo científico |
| id | redalyc_46437804 |
| language | en |
| publishDate | 2007 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Temperature-Dependent Photoluminescence Spectra of GaAsSb/AlGaAs and GaAsSbN/GaAs Single Quantum Wells under Different Excitation Intensities V. M. Aquino Física, Astronomía y Matemáticas Diluted III Quantum wells V semiconductors Photoluminescece Exciton localization Temperature-Dependent Photoluminescence Spectra of GaAsSb/AlGaAs and GaAsSbN/GaAs Single Quantum Wells under Different Excitation Intensities V. M. Aquino J. C. Harmand S. A. Lourenço I. F. L. Dias J. L. Duarte E. Laureto Física, Astronomía y Matemáticas Diluted III Quantum wells V semiconductors Photoluminescece Exciton localization The mechanism for low-temperature photoluminescence (PL) emissions in GaAsSb/AlGaAs andGaAsSbN/GaAs strained-layer single quantum wells (SQWs), grown by molecular-beam epitaxy, is studied indetail, using PL spectroscopy as a function of temperature and excitation intensity. In all samples, the PL peakenergy as well as the full width at half maximum (FWHM), as a function of temperature, present anomalousbehaviors, i:e., the PL peak energy shows a successive red/blue/redshift (S-shaped behavior) and the FWHMshows a successive blue/red/blueshift (inverted S-shaped curve) with increasing temperature. At sufficientlylow excitation intensity and in a narrow temperature interval (50 80 K), the nitrogen-containing samplespresent two clear competitive PL peaks. The low-energy PL mechanism (8 80 K) is dominated by localizedPL transitions, while the high-energy PL mechanism is dominated by the ground state (e1-hh1) PL transition.Additionally, these PL peaks show different temperature dependence with the low-energy PL peak, showinga stronger redshift than the high-energy PL peak. A competition process between localized and delocalizedexcitons is used to discuss these PL properties 2007 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46437804 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.4 Vol.37 |
| title | Temperature-Dependent Photoluminescence Spectra of GaAsSb/AlGaAs and GaAsSbN/GaAs Single Quantum Wells under Different Excitation Intensities |
| topic | Física, Astronomía y Matemáticas Diluted III Quantum wells V semiconductors Photoluminescece Exciton localization |
| url | https://www.redalyc.org/articulo.oa?id=46437804 |