Modeling of High-Quality Factor XNOR Gate Using Quantum-Dot Semiconductor Optical Amplifiers at 1 Tb/s
Fuente:
Redalyc
Saved in:
| Main Author: | |
|---|---|
| Format: | Artículo científico |
| Language: | en |
| Published: |
Sociedade Brasileira de Física
2015
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1876486734028472320 |
|---|---|
| author | Amer Kotb |
| author_facet | Amer Kotb |
| contents | Modeling of High-Quality Factor XNOR Gate Using Quantum-Dot Semiconductor Optical Amplifiers at 1 Tb/s Amer Kotb Física, Astronomía y Matemáticas 1Tb Quantum XNORgate Amplified spontaneous emission dotsemiconductor opticalamplifier The modeling of all-optical logic XNOR gate is realized by a series combination of XOR and INVERT gates. This Boolean function is simulated by using Mach – Zehnder interferometers (MZIs) utilizing quantum-dots semiconductor optical amplifiers (QDs-SOAs). The study is carried out when the effect of amplified spontaneous emission (ASE) is includ- ed. The dependence of the output quality factor ( Q -factor) on signals and QDs-SOAs ’ parameters is also investigated and discussed. The simulation is conducted under a repetition rate of ∼ 1 Tb/s. 2015 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46439436004 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3 Vol.45 |
| format | Artículo científico |
| id | redalyc_46439436004 |
| institution | Redalyc |
| language | en |
| publishDate | 2015 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Modeling of High-Quality Factor XNOR Gate Using Quantum-Dot Semiconductor Optical Amplifiers at 1 Tb/s Amer Kotb Física, Astronomía y Matemáticas 1Tb Quantum XNORgate Amplified spontaneous emission dotsemiconductor opticalamplifier Modeling of High-Quality Factor XNOR Gate Using Quantum-Dot Semiconductor Optical Amplifiers at 1 Tb/s Amer Kotb Física, Astronomía y Matemáticas 1Tb Quantum XNORgate Amplified spontaneous emission dotsemiconductor opticalamplifier The modeling of all-optical logic XNOR gate is realized by a series combination of XOR and INVERT gates. This Boolean function is simulated by using Mach – Zehnder interferometers (MZIs) utilizing quantum-dots semiconductor optical amplifiers (QDs-SOAs). The study is carried out when the effect of amplified spontaneous emission (ASE) is includ- ed. The dependence of the output quality factor ( Q -factor) on signals and QDs-SOAs ’ parameters is also investigated and discussed. The simulation is conducted under a repetition rate of ∼ 1 Tb/s. 2015 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46439436004 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3 Vol.45 |
| title | Modeling of High-Quality Factor XNOR Gate Using Quantum-Dot Semiconductor Optical Amplifiers at 1 Tb/s |
| topic | Física, Astronomía y Matemáticas 1Tb Quantum XNORgate Amplified spontaneous emission dotsemiconductor opticalamplifier |
| url | https://www.redalyc.org/articulo.oa?id=46439436004 |