Enregistré dans:
| Auteur principal: | |
|---|---|
| Format: | Artículo científico |
| Langue: | en |
| Publié: |
Sociedade Brasileira de Física
2015
|
| Sujets: | |
| Accès en ligne: | https://www.redalyc.org/articulo.oa?id=46439436004 |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
Table des matières:
- Modeling of High-Quality Factor XNOR Gate Using Quantum-Dot Semiconductor Optical Amplifiers at 1 Tb/s Amer Kotb Física, Astronomía y Matemáticas 1Tb Quantum XNORgate Amplified spontaneous emission dotsemiconductor opticalamplifier The modeling of all-optical logic XNOR gate is realized by a series combination of XOR and INVERT gates. This Boolean function is simulated by using Mach – Zehnder interferometers (MZIs) utilizing quantum-dots semiconductor optical amplifiers (QDs-SOAs). The study is carried out when the effect of amplified spontaneous emission (ASE) is includ- ed. The dependence of the output quality factor ( Q -factor) on signals and QDs-SOAs ’ parameters is also investigated and discussed. The simulation is conducted under a repetition rate of ∼ 1 Tb/s. 2015 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46439436004 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3 Vol.45