Optimization on rf devices design applied in wireless communications
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| Format: | Artículo científico |
| Langue: | en |
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Universidad Nacional Autónoma de México
2003
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| _version_ | 1876478412532482048 |
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| author | C. Alor |
| author_facet | C. Alor |
| contents | Optimization on rf devices design applied in wireless communications C. Alor D. H. Covarrubias Ingeniería high linearity low distortion Power amplifier mobile terminal mobile communications Third generation (3G) cellular mobile communications demands very strict requirements on transreceptordevices design, in mobile terminal or base station [1].Particularly, in mobile terminal, design requirements of power amplifier indicate the next parameters:High linearity (<-42dBc), low distortion (-42dBc), compression level of 1 dB, power gain (> 20 dB), maximumoutput power (28 dB), by the way of together carry out with the relationship Carrier to Interference (C/I) of 9dB [2]. In this article, we will present the optimum design of these devices that carrying with suchrequirements, furthermore, saving more than 20 % of general power consumption in DC. 2003 artículo científico 1665-6423 https://www.redalyc.org/articulo.oa?id=47400103 en http://www.redalyc.org/revista.oa?id=474 Journal of Applied Research and Technology application/pdf Universidad Nacional Autónoma de México Journal of Applied Research and Technology (México) Num.1 Vol.1 |
| format | Artículo científico |
| id | redalyc_47400103 |
| institution | Redalyc |
| language | en |
| publishDate | 2003 |
| publisher | Universidad Nacional Autónoma de México |
| spellingShingle | Optimization on rf devices design applied in wireless communications C. Alor Ingeniería high linearity low distortion Power amplifier mobile terminal mobile communications Optimization on rf devices design applied in wireless communications C. Alor D. H. Covarrubias Ingeniería high linearity low distortion Power amplifier mobile terminal mobile communications Third generation (3G) cellular mobile communications demands very strict requirements on transreceptordevices design, in mobile terminal or base station [1].Particularly, in mobile terminal, design requirements of power amplifier indicate the next parameters:High linearity (<-42dBc), low distortion (-42dBc), compression level of 1 dB, power gain (> 20 dB), maximumoutput power (28 dB), by the way of together carry out with the relationship Carrier to Interference (C/I) of 9dB [2]. In this article, we will present the optimum design of these devices that carrying with suchrequirements, furthermore, saving more than 20 % of general power consumption in DC. 2003 artículo científico 1665-6423 https://www.redalyc.org/articulo.oa?id=47400103 en http://www.redalyc.org/revista.oa?id=474 Journal of Applied Research and Technology application/pdf Universidad Nacional Autónoma de México Journal of Applied Research and Technology (México) Num.1 Vol.1 |
| title | Optimization on rf devices design applied in wireless communications |
| topic | Ingeniería high linearity low distortion Power amplifier mobile terminal mobile communications |
| url | https://www.redalyc.org/articulo.oa?id=47400103 |