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| Format: | Artículo científico |
| Language: | en |
| Published: |
Universidad Nacional Autónoma de México
2005
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| Online Access: | https://www.redalyc.org/articulo.oa?id=47401104 |
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| _version_ | 1866558134675308544 |
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| author | P. J. García Ramírez |
| author_facet | P. J. García Ramírez |
| contents | Performance of a MFS-Based Mosfet for low temperature Applications P. J. García Ramírez Federico Sandoval Ibarra Ingeniería Sensors Integrated circuits A split-drain MAGFET has been designed for detecting magnetic fields at very low temperature. In this design a keyparameter is the Hall angle, which indicates the current line deviation due to the Lorentz force acting on the chargecarriers. It is well known that reducing the work temperature the carrier mobility increases, therefore an increase incarrier deflection is expected. As a consequence the split-drain MAGFET is able to detect magnetic fields below 1mTat 77K with low power consumption. Experimental results of a wide temperature range (20K<T≤300K) arepresented. 2005 artículo científico 1665-6423 https://www.redalyc.org/articulo.oa?id=47401104 en http://www.redalyc.org/revista.oa?id=474 Journal of Applied Research and Technology application/pdf Universidad Nacional Autónoma de México Journal of Applied Research and Technology (México) Num.1 Vol.1 |
| format | Artículo científico |
| id | redalyc_47401104 |
| language | en |
| publishDate | 2005 |
| publisher | Universidad Nacional Autónoma de México |
| spellingShingle | Performance of a MFS-Based Mosfet for low temperature Applications P. J. García Ramírez Ingeniería Sensors Integrated circuits Performance of a MFS-Based Mosfet for low temperature Applications P. J. García Ramírez Federico Sandoval Ibarra Ingeniería Sensors Integrated circuits A split-drain MAGFET has been designed for detecting magnetic fields at very low temperature. In this design a keyparameter is the Hall angle, which indicates the current line deviation due to the Lorentz force acting on the chargecarriers. It is well known that reducing the work temperature the carrier mobility increases, therefore an increase incarrier deflection is expected. As a consequence the split-drain MAGFET is able to detect magnetic fields below 1mTat 77K with low power consumption. Experimental results of a wide temperature range (20K<T≤300K) arepresented. 2005 artículo científico 1665-6423 https://www.redalyc.org/articulo.oa?id=47401104 en http://www.redalyc.org/revista.oa?id=474 Journal of Applied Research and Technology application/pdf Universidad Nacional Autónoma de México Journal of Applied Research and Technology (México) Num.1 Vol.1 |
| title | Performance of a MFS-Based Mosfet for low temperature Applications |
| topic | Ingeniería Sensors Integrated circuits |
| url | https://www.redalyc.org/articulo.oa?id=47401104 |