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| Main Author: | |
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| Format: | Artículo científico |
| Language: | en |
| Published: |
Universidad Nacional Autónoma de México
2014
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| Online Access: | https://www.redalyc.org/articulo.oa?id=47431368012 |
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Table of Contents:
- Enhanced RF Characteristics of a 0.5 μm High Voltage nMOSFET (HVMOS) in a Standard CMOS Technology H. J. Saavedra-Gómez J. R. Loo-Yau Juan Luis del Valle-Padilla P. Moreno F. Sandoval-Ibarra J. A. Reynoso-Hernández Ingeniería HVMOS MOSFET High Breakdown In this work a technique to heighten the breakdown voltage and the transition frequency ( f T ) in standard MOS technology is presented. By using an optimized extended dr ift region at the drain, a CMOS FET can achieve higher breakdown voltage. To enhance the oper ation frequency, the standard analog/digital pads were modified to decrease coupling effects with the substrate. These two enhancem ents make the proposed MOSFET structure suitable for mid- power RF applications. Experimental measurements on a High Voltage MOSFET (HVMOS FET) show a breakdown voltage of 20 V, IP3 of +30.2 dBm and an impr ovement of 31.9% and 34.7% of the extrinsic f T and f max , respectively. 2014 artículo científico 1665-6423 https://www.redalyc.org/articulo.oa?id=47431368012 en http://www.redalyc.org/revista.oa?id=474 Journal of Applied Research and Technology application/pdf Universidad Nacional Autónoma de México Journal of Applied Research and Technology (México) Num.3 Vol.12