Effects of excimer laser annealing on low-temperature solution based indium-zinc-oxide thin film transistor fabrication
Fuente:
Redalyc
Enregistré dans:
| Auteur principal: | |
|---|---|
| Format: | Artículo científico |
| Langue: | en |
| Publié: |
Universidad Nacional Autónoma de México
2015
|
| Sujets: | |
| Accès en ligne: | |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
| _version_ | 1876473726649761792 |
|---|---|
| author | Chao-Nan Chen |
| author_facet | Chao-Nan Chen |
| contents | Effects of excimer laser annealing on low-temperature solution based indium-zinc-oxide thin film transistor fabrication Chao-Nan Chen Jung-Jie Huang Ingeniería zinc thin oxide indium film transistor A Solution Based Indium-Zinc-Oxide thin-film transistor (TFT) with a field-effect mobility of 0.58 cm2 /Vs, a threshold voltage of 2.84 V by using pulse laser annealing processes. Indium-zinc-oxide (IZO) films with a low process temperature were deposited by sol-gel solution based method and KrF excimer laser annealing (wavelength of 248 nm). Solution based indium-zinc-oxide (IZO) films usually needs high temperature about 500°C post annealing in a oven. KrF excimer laser annealing shows advantages of low temperature process, the less process time deceases to only few seconds was used to replace the high temperature process. IZO thin films suffering laser irradiation still keeps the amorphous film quality by transmission electron microscopy (TEM) diffraction pattern analysis. It could be expected this technology to large-area flexible display, in the future. 2015 artículo científico 1665-6423 https://www.redalyc.org/articulo.oa?id=47439895002 en http://www.redalyc.org/revista.oa?id=474 Journal of Applied Research and Technology application/pdf Universidad Nacional Autónoma de México Journal of Applied Research and Technology (México) Num.2 Vol.13 |
| format | Artículo científico |
| id | redalyc_47439895002 |
| institution | Redalyc |
| language | en |
| publishDate | 2015 |
| publisher | Universidad Nacional Autónoma de México |
| spellingShingle | Effects of excimer laser annealing on low-temperature solution based indium-zinc-oxide thin film transistor fabrication Chao-Nan Chen Ingeniería zinc thin oxide indium film transistor Effects of excimer laser annealing on low-temperature solution based indium-zinc-oxide thin film transistor fabrication Chao-Nan Chen Jung-Jie Huang Ingeniería zinc thin oxide indium film transistor A Solution Based Indium-Zinc-Oxide thin-film transistor (TFT) with a field-effect mobility of 0.58 cm2 /Vs, a threshold voltage of 2.84 V by using pulse laser annealing processes. Indium-zinc-oxide (IZO) films with a low process temperature were deposited by sol-gel solution based method and KrF excimer laser annealing (wavelength of 248 nm). Solution based indium-zinc-oxide (IZO) films usually needs high temperature about 500°C post annealing in a oven. KrF excimer laser annealing shows advantages of low temperature process, the less process time deceases to only few seconds was used to replace the high temperature process. IZO thin films suffering laser irradiation still keeps the amorphous film quality by transmission electron microscopy (TEM) diffraction pattern analysis. It could be expected this technology to large-area flexible display, in the future. 2015 artículo científico 1665-6423 https://www.redalyc.org/articulo.oa?id=47439895002 en http://www.redalyc.org/revista.oa?id=474 Journal of Applied Research and Technology application/pdf Universidad Nacional Autónoma de México Journal of Applied Research and Technology (México) Num.2 Vol.13 |
| title | Effects of excimer laser annealing on low-temperature solution based indium-zinc-oxide thin film transistor fabrication |
| topic | Ingeniería zinc thin oxide indium film transistor |
| url | https://www.redalyc.org/articulo.oa?id=47439895002 |