Transistor characteristics of zinc oxide active layers at various zinc acetate dihydrate solution concentrations of zinc oxide thin-film
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| Format: | Artículo científico |
| Language: | en |
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Universidad Nacional Autónoma de México
2015
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| author | You H.C. |
| author_facet | You H.C. |
| contents | Transistor characteristics of zinc oxide active layers at various zinc acetate dihydrate solution concentrations of zinc oxide thin-film You H.C. Ingeniería ZnO thin concentration film transistor Zinc acetate dihydrate solution This paper presents a technique involving a sol-gel deposition method applied to the deposition of zinc oxide thin film for a transistor as a semiconductor layer. This method was used for manufacturing the essential thin films of II-VI semiconductors. Zinc oxide (ZnO) bottom-gate (BG) thin-film transistors (TFTs) have been successfully fabricated at low temperatures. We investigated the electrical characteristics of ZnO thin-film transistors at various concentrations of ZnO solution: 0.02 M, 0.03 M, 0.04 M, and 0.05 M. All of the ZnO films exhibited a hexagonal wurtzite polycrystalline structure with (002) preferred orientation. Atomic force microscopy (AFM) revealed the formation of grains or clusters as a result of the accumulation of nanoparticles, and the grain size increased with increasing solution concentration. The coated ZnO films were employed as the active channel layer in thin-film transistors, and the impact of the solution concentration on the device performance was examined. As the solution concentration was increased, the field-effect mobility increased from 1 × 10–4 cm2 /V-s to 1.2 × 10–1 cm2 /V-s, the threshold voltage increased from 4.8 V to 11.1 V, and the Ion/Ioff ratio increased from 104 to 106 . The on-off ratio (Ion/off) was found to be 106 . The 0.05 M ZnO solution performed optimally. 2015 artículo científico 1665-6423 https://www.redalyc.org/articulo.oa?id=47439895015 en http://www.redalyc.org/revista.oa?id=474 Journal of Applied Research and Technology application/pdf Universidad Nacional Autónoma de México Journal of Applied Research and Technology (México) Num.2 Vol.13 |
| format | Artículo científico |
| id | redalyc_47439895015 |
| institution | Redalyc |
| language | en |
| publishDate | 2015 |
| publisher | Universidad Nacional Autónoma de México |
| spellingShingle | Transistor characteristics of zinc oxide active layers at various zinc acetate dihydrate solution concentrations of zinc oxide thin-film You H.C. Ingeniería ZnO thin concentration film transistor Zinc acetate dihydrate solution Transistor characteristics of zinc oxide active layers at various zinc acetate dihydrate solution concentrations of zinc oxide thin-film You H.C. Ingeniería ZnO thin concentration film transistor Zinc acetate dihydrate solution This paper presents a technique involving a sol-gel deposition method applied to the deposition of zinc oxide thin film for a transistor as a semiconductor layer. This method was used for manufacturing the essential thin films of II-VI semiconductors. Zinc oxide (ZnO) bottom-gate (BG) thin-film transistors (TFTs) have been successfully fabricated at low temperatures. We investigated the electrical characteristics of ZnO thin-film transistors at various concentrations of ZnO solution: 0.02 M, 0.03 M, 0.04 M, and 0.05 M. All of the ZnO films exhibited a hexagonal wurtzite polycrystalline structure with (002) preferred orientation. Atomic force microscopy (AFM) revealed the formation of grains or clusters as a result of the accumulation of nanoparticles, and the grain size increased with increasing solution concentration. The coated ZnO films were employed as the active channel layer in thin-film transistors, and the impact of the solution concentration on the device performance was examined. As the solution concentration was increased, the field-effect mobility increased from 1 × 10–4 cm2 /V-s to 1.2 × 10–1 cm2 /V-s, the threshold voltage increased from 4.8 V to 11.1 V, and the Ion/Ioff ratio increased from 104 to 106 . The on-off ratio (Ion/off) was found to be 106 . The 0.05 M ZnO solution performed optimally. 2015 artículo científico 1665-6423 https://www.redalyc.org/articulo.oa?id=47439895015 en http://www.redalyc.org/revista.oa?id=474 Journal of Applied Research and Technology application/pdf Universidad Nacional Autónoma de México Journal of Applied Research and Technology (México) Num.2 Vol.13 |
| title | Transistor characteristics of zinc oxide active layers at various zinc acetate dihydrate solution concentrations of zinc oxide thin-film |
| topic | Ingeniería ZnO thin concentration film transistor Zinc acetate dihydrate solution |
| url | https://www.redalyc.org/articulo.oa?id=47439895015 |