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| Format: | Artículo científico |
| Sprache: | en |
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Universidad Nacional Autónoma de México
2007
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| Online-Zugang: | https://www.redalyc.org/articulo.oa?id=47450105 |
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| _version_ | 1866817135600205824 |
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| author | F. Sandoval Ibarra |
| author_facet | F. Sandoval Ibarra |
| contents | A 2× voltage generator analytical model F. Sandoval Ibarra E. Vargas Calderón O. Corona Murguía E. Montoya Suárez Ingeniería 40 Bh 84 30 Bv Since portable systems and processing power applications demand efficient power consumption, this paperdeals with the development of an analytical model based on the on-resistance effect of MOS switches todesign a silicon-based charge-pump voltage generator (VG). This model that is developed for adding designparameters under the designers control is a useful design tool to quickly estimate the VGs performance inthe time domain. Numerical results are compared with transistor-level simulation to validate not only theanalytical model, but also to estimate the integration area of a silicon-based VG. It was found that an onresistanceranging from zero to 50 Ω presents a relative error of 2%. Experimental results show theusefulness of the proposed design model. 2007 artículo científico 1665-6423 https://www.redalyc.org/articulo.oa?id=47450105 en http://www.redalyc.org/revista.oa?id=474 Journal of Applied Research and Technology application/pdf Universidad Nacional Autónoma de México Journal of Applied Research and Technology (México) Num.1 Vol.5 |
| format | Artículo científico |
| id | redalyc_47450105 |
| language | en |
| publishDate | 2007 |
| publisher | Universidad Nacional Autónoma de México |
| spellingShingle | A 2× voltage generator analytical model F. Sandoval Ibarra Ingeniería 40 Bh 84 30 Bv A 2× voltage generator analytical model F. Sandoval Ibarra E. Vargas Calderón O. Corona Murguía E. Montoya Suárez Ingeniería 40 Bh 84 30 Bv Since portable systems and processing power applications demand efficient power consumption, this paperdeals with the development of an analytical model based on the on-resistance effect of MOS switches todesign a silicon-based charge-pump voltage generator (VG). This model that is developed for adding designparameters under the designers control is a useful design tool to quickly estimate the VGs performance inthe time domain. Numerical results are compared with transistor-level simulation to validate not only theanalytical model, but also to estimate the integration area of a silicon-based VG. It was found that an onresistanceranging from zero to 50 Ω presents a relative error of 2%. Experimental results show theusefulness of the proposed design model. 2007 artículo científico 1665-6423 https://www.redalyc.org/articulo.oa?id=47450105 en http://www.redalyc.org/revista.oa?id=474 Journal of Applied Research and Technology application/pdf Universidad Nacional Autónoma de México Journal of Applied Research and Technology (México) Num.1 Vol.5 |
| title | A 2× voltage generator analytical model |
| topic | Ingeniería 40 Bh 84 30 Bv |
| url | https://www.redalyc.org/articulo.oa?id=47450105 |