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  • The problem of crack formation in thin sublayers of silicon oxide during pulsed heating of interconnects
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The problem of crack formation in thin sublayers of silicon oxide during pulsed heating of interconnects

Fuente: Redalyc
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Bibliographic Details
Main Author: Arkadiy A. Skvortsov
Format: Artículo científico
Language:en
Published: Universidad Nacional Autónoma de México 2021
Subjects:
Ingeniería
Micro
electro
oxide films
heat equation
silicon oxide
Online Access:
Acceder al recurso 1 Acceder al recurso 2 Acceder al recurso 3 Acceder al recurso 4 Acceder al recurso 5
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Internet

https://www.redalyc.org/articulo.oa?id=47471684001
https://www.redalyc.org/journal/474/47471684001/
https://www.redalyc.org/journal/474/47471684001/html/
https://www.redalyc.org/journal/474/47471684001/47471684001.epub
https://www.redalyc.org/journal/474/47471684001/movil

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