ANALYSIS OF SILICON CARBIDE POLYMORPHS SUBSTRATES EFFECT ON PERFORMANCES OF ALGAN/GAN DOUBLE QUANTUM WELL HEMTS
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| Format: | Artículo científico |
| Language: | en |
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Instituto Federal de Educação, Ciência e Tecnologia do Rio Grande do Norte
2019
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| _version_ | 1876488034034122752 |
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| author | M. Sabaghi |
| author_facet | M. Sabaghi |
| contents | ANALYSIS OF SILICON CARBIDE POLYMORPHS SUBSTRATES EFFECT ON PERFORMANCES OF ALGAN/GAN DOUBLE QUANTUM WELL HEMTS M. Sabaghi Ingeniería 6H 3C 4H SiC GaN AlGaN/GaN high electron mobility transistors (HEMTs) have established terrific features in the high-power and high-frequency applications of microwave device. In this paper, the impact of silicon carbide polymorphs substrates including 6H-SiC, 3C-SiC and 4H-SiC on the performances of AlGaN/GaN double quantum well HEMTs (DQW-HEMTs) are analyzed and investigated. The results show that the devices with 4H-SiC and 6HSiC substrates exhibit a higher transconductance of about 192 ms/mm at VDS = 15 V and a lower minimum noise figure (NFmin) of 0.48 and 0.42 dB at 10 GHz than those of devices with 3C-SiC, respectively. Whereas, DCHEMT with 3C-SiC substrate has a transconductance of about 180 ms/mm at VDS = 15 V and a minimum noise figure of 3.01 dB at 10 GHz. On the other hands, the DCHEMT with 3C-SiC substrate has lower drain gate capacitance (Cdg) and higher cut-off frequency (ft) than DC-HEMT with 4H-SiC and 6H-SiC substrates. The results demonstrate that AlGaN/GaN DH-HEMTs 4H-SiC and 6HSiC substrates are promising devices for future highpower and high-frequency electron device applications. 2019 artículo científico 1518-1634 https://www.redalyc.org/articulo.oa?id=481582783017 en http://www.redalyc.org/revista.oa?id=4815 HOLOS application/pdf Instituto Federal de Educação, Ciência e Tecnologia do Rio Grande do Norte HOLOS (Brasil) Vol.2 |
| format | Artículo científico |
| id | redalyc_481582783017 |
| institution | Redalyc |
| language | en |
| publishDate | 2019 |
| publisher | Instituto Federal de Educação, Ciência e Tecnologia do Rio Grande do Norte |
| spellingShingle | ANALYSIS OF SILICON CARBIDE POLYMORPHS SUBSTRATES EFFECT ON PERFORMANCES OF ALGAN/GAN DOUBLE QUANTUM WELL HEMTS M. Sabaghi Ingeniería 6H 3C 4H SiC GaN ANALYSIS OF SILICON CARBIDE POLYMORPHS SUBSTRATES EFFECT ON PERFORMANCES OF ALGAN/GAN DOUBLE QUANTUM WELL HEMTS M. Sabaghi Ingeniería 6H 3C 4H SiC GaN AlGaN/GaN high electron mobility transistors (HEMTs) have established terrific features in the high-power and high-frequency applications of microwave device. In this paper, the impact of silicon carbide polymorphs substrates including 6H-SiC, 3C-SiC and 4H-SiC on the performances of AlGaN/GaN double quantum well HEMTs (DQW-HEMTs) are analyzed and investigated. The results show that the devices with 4H-SiC and 6HSiC substrates exhibit a higher transconductance of about 192 ms/mm at VDS = 15 V and a lower minimum noise figure (NFmin) of 0.48 and 0.42 dB at 10 GHz than those of devices with 3C-SiC, respectively. Whereas, DCHEMT with 3C-SiC substrate has a transconductance of about 180 ms/mm at VDS = 15 V and a minimum noise figure of 3.01 dB at 10 GHz. On the other hands, the DCHEMT with 3C-SiC substrate has lower drain gate capacitance (Cdg) and higher cut-off frequency (ft) than DC-HEMT with 4H-SiC and 6H-SiC substrates. The results demonstrate that AlGaN/GaN DH-HEMTs 4H-SiC and 6HSiC substrates are promising devices for future highpower and high-frequency electron device applications. 2019 artículo científico 1518-1634 https://www.redalyc.org/articulo.oa?id=481582783017 en http://www.redalyc.org/revista.oa?id=4815 HOLOS application/pdf Instituto Federal de Educação, Ciência e Tecnologia do Rio Grande do Norte HOLOS (Brasil) Vol.2 |
| title | ANALYSIS OF SILICON CARBIDE POLYMORPHS SUBSTRATES EFFECT ON PERFORMANCES OF ALGAN/GAN DOUBLE QUANTUM WELL HEMTS |
| topic | Ingeniería 6H 3C 4H SiC GaN |
| url | https://www.redalyc.org/articulo.oa?id=481582783017 |