LOCAL ANODIC OXIDATION ON SILICON (100) SUBSTRATES USING ATOMIC FORCE MICROSCOPY

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Main Author: ALBA GRACIELA ÁVILA BERNAL
Format: Artículo científico
Language:en
Published: Universidad Nacional de Colombia 2012
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author ALBA GRACIELA ÁVILA BERNAL
author_facet ALBA GRACIELA ÁVILA BERNAL
contents LOCAL ANODIC OXIDATION ON SILICON (100) SUBSTRATES USING ATOMIC FORCE MICROSCOPY ALBA GRACIELA ÁVILA BERNAL RUY SEBASTIÁN BONILLA Ingeniería LAO AFM Nano patterns A characterization of local anodic oxidation using scanning probe microscopy is performed on a (100) silicon substrate. The formation of patterns varies as a function of voltage, humidity, and scanning speed. A set of experiments is presented to analyze the voltage and scanning speed dependence under stable environmental conditions (50.5% relative humidity, 22 °C, and 767 mmHg). A finer control of the dimensions of the local oxidation patterns is attained at low voltages and low scanning speeds. Oxide ridges are observed at high voltages independently of the writing speed. Their presence sets up an upper limit for the oxide pattern formation. 2012 artículo científico 0012-7353 https://www.redalyc.org/articulo.oa?id=49623216009 en http://www.redalyc.org/revista.oa?id=496 Dyna application/pdf Universidad Nacional de Colombia Dyna (Colombia) Num.174 Vol.79
format Artículo científico
id redalyc_49623216009
institution Redalyc
language en
publishDate 2012
publisher Universidad Nacional de Colombia
spellingShingle LOCAL ANODIC OXIDATION ON SILICON (100) SUBSTRATES USING ATOMIC FORCE MICROSCOPY
ALBA GRACIELA ÁVILA BERNAL
Ingeniería
LAO
AFM
Nano
patterns
LOCAL ANODIC OXIDATION ON SILICON (100) SUBSTRATES USING ATOMIC FORCE MICROSCOPY ALBA GRACIELA ÁVILA BERNAL RUY SEBASTIÁN BONILLA Ingeniería LAO AFM Nano patterns A characterization of local anodic oxidation using scanning probe microscopy is performed on a (100) silicon substrate. The formation of patterns varies as a function of voltage, humidity, and scanning speed. A set of experiments is presented to analyze the voltage and scanning speed dependence under stable environmental conditions (50.5% relative humidity, 22 °C, and 767 mmHg). A finer control of the dimensions of the local oxidation patterns is attained at low voltages and low scanning speeds. Oxide ridges are observed at high voltages independently of the writing speed. Their presence sets up an upper limit for the oxide pattern formation. 2012 artículo científico 0012-7353 https://www.redalyc.org/articulo.oa?id=49623216009 en http://www.redalyc.org/revista.oa?id=496 Dyna application/pdf Universidad Nacional de Colombia Dyna (Colombia) Num.174 Vol.79
title LOCAL ANODIC OXIDATION ON SILICON (100) SUBSTRATES USING ATOMIC FORCE MICROSCOPY
topic Ingeniería
LAO
AFM
Nano
patterns
url https://www.redalyc.org/articulo.oa?id=49623216009