Monte Carlo simulation of epitaxial growth of GaInAsSb films
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| Format: | Artículo científico |
| Language: | en |
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Universidad Nacional de Colombia
2014
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| _version_ | 1876469322504732672 |
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| author | Jheison Alejandro Morales |
| author_facet | Jheison Alejandro Morales |
| contents | Monte Carlo simulation of epitaxial growth of GaInAsSb films Jheison Alejandro Morales Manuel Eduardo Ríos-Olaya Liliana Tirado-Mejía Ingeniería Keywords GaInAsSb Ising model Kinetic Monte Carlo liquid phase epitaxy Material engineering finds an important support on simulation m ethods. The study of semiconductors growth techniques through s imulation allows the determination of the influence of some growth parame ters on the film properties. Experimentally, the variations of these parameters are difficult due to the high experimental demands a nd expenses. In this work we present the numerical simulation o f the epitaxial growth of GaInAsSb by three methods. Devices based on this semiconductor material are thermophotovoltaic generators. The solid-on-solid approximation was used, considering the unit cel l formed by the four constituent elements, in the establish pro portions according to the choose stoichiometry. Through the Kinetic Mont e Carlo method we obtained a high coincidence between the simul ated film morphology and the obtained in the experimentally grown films. 2014 artículo científico 0012-7353 https://www.redalyc.org/articulo.oa?id=49632363024 en http://www.redalyc.org/revista.oa?id=496 Dyna application/pdf Universidad Nacional de Colombia Dyna (Colombia) Num.187 Vol.81 |
| format | Artículo científico |
| id | redalyc_49632363024 |
| institution | Redalyc |
| language | en |
| publishDate | 2014 |
| publisher | Universidad Nacional de Colombia |
| spellingShingle | Monte Carlo simulation of epitaxial growth of GaInAsSb films Jheison Alejandro Morales Ingeniería Keywords GaInAsSb Ising model Kinetic Monte Carlo liquid phase epitaxy Monte Carlo simulation of epitaxial growth of GaInAsSb films Jheison Alejandro Morales Manuel Eduardo Ríos-Olaya Liliana Tirado-Mejía Ingeniería Keywords GaInAsSb Ising model Kinetic Monte Carlo liquid phase epitaxy Material engineering finds an important support on simulation m ethods. The study of semiconductors growth techniques through s imulation allows the determination of the influence of some growth parame ters on the film properties. Experimentally, the variations of these parameters are difficult due to the high experimental demands a nd expenses. In this work we present the numerical simulation o f the epitaxial growth of GaInAsSb by three methods. Devices based on this semiconductor material are thermophotovoltaic generators. The solid-on-solid approximation was used, considering the unit cel l formed by the four constituent elements, in the establish pro portions according to the choose stoichiometry. Through the Kinetic Mont e Carlo method we obtained a high coincidence between the simul ated film morphology and the obtained in the experimentally grown films. 2014 artículo científico 0012-7353 https://www.redalyc.org/articulo.oa?id=49632363024 en http://www.redalyc.org/revista.oa?id=496 Dyna application/pdf Universidad Nacional de Colombia Dyna (Colombia) Num.187 Vol.81 |
| title | Monte Carlo simulation of epitaxial growth of GaInAsSb films |
| topic | Ingeniería Keywords GaInAsSb Ising model Kinetic Monte Carlo liquid phase epitaxy |
| url | https://www.redalyc.org/articulo.oa?id=49632363024 |