A 540µT-1 silicon-based MAGFET

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Auteur principal: M.A. Dávalos-Santana
Format: Artículo científico
Langue:en
Publié: Sociedad Mexicana de Física A.C. 2007
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author M.A. Dávalos-Santana
author_facet M.A. Dávalos-Santana
contents A 540µT-1 silicon-based MAGFET M.A. Dávalos-Santana F. Sandoval-Ibarra E. Montoya-Suárez Física, Astronomía y Matemáticas microelectronics field effect devices Semiconductor devices This paper describes an MOS transistor-based transducer used for measuring magnetic fields. The setup, the electric/magnetic characterization, and an equivalent circuit for transistor level simulations are presented. The sensor (also called MAGFET), designed in a 1.5 µm CMOS process, presents a relative magnetic sensitivity Sr=540/µT-1 at room temperature. 2007 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57013227012 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.3 Vol.53
format Artículo científico
id redalyc_57013227012
institution Redalyc
language en
publishDate 2007
publisher Sociedad Mexicana de Física A.C.
spellingShingle A 540µT-1 silicon-based MAGFET
M.A. Dávalos-Santana
Física, Astronomía y Matemáticas
microelectronics
field effect devices
Semiconductor devices
A 540µT-1 silicon-based MAGFET M.A. Dávalos-Santana F. Sandoval-Ibarra E. Montoya-Suárez Física, Astronomía y Matemáticas microelectronics field effect devices Semiconductor devices This paper describes an MOS transistor-based transducer used for measuring magnetic fields. The setup, the electric/magnetic characterization, and an equivalent circuit for transistor level simulations are presented. The sensor (also called MAGFET), designed in a 1.5 µm CMOS process, presents a relative magnetic sensitivity Sr=540/µT-1 at room temperature. 2007 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57013227012 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.3 Vol.53
title A 540µT-1 silicon-based MAGFET
topic Física, Astronomía y Matemáticas
microelectronics
field effect devices
Semiconductor devices
url https://www.redalyc.org/articulo.oa?id=57013227012