Electrical characterization of planarized a-SiGe:H Thin-film Transistors
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| Format: | Artículo científico |
| Sprache: | en |
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Sociedad Mexicana de Física A.C.
2013
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| _version_ | 1876489959519551488 |
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| author | M. Dominguez |
| author_facet | M. Dominguez |
| contents | Electrical characterization of planarized a-SiGe:H Thin-film Transistors M. Dominguez P. Rosales A. Torresa Física, Astronomía y Matemáticas low Thin spin spice on glass In this work the electrical characterization of n-channel a-SiGe:H TFTs with planarized gate electrode is presented. The planarized a-SiGe:H TFTs were fabricated at 200±C on corning glass substrate. The devices exhibit a subthreshold slope of 0.56 V/Decade, an on/off-current ratio approximately of 106 and off-current approximately of 0.3£10¡12 A. The results show an improvement of the electrical characteristics when are compared to those unplanarized devices fabricated at higher temperature. Moreover, the simulation of the device using a SPICE model is presented. 2013 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57025669010 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.1 Vol.59 |
| format | Artículo científico |
| id | redalyc_57025669010 |
| institution | Redalyc |
| language | en |
| publishDate | 2013 |
| publisher | Sociedad Mexicana de Física A.C. |
| spellingShingle | Electrical characterization of planarized a-SiGe:H Thin-film Transistors M. Dominguez Física, Astronomía y Matemáticas low Thin spin spice on glass Electrical characterization of planarized a-SiGe:H Thin-film Transistors M. Dominguez P. Rosales A. Torresa Física, Astronomía y Matemáticas low Thin spin spice on glass In this work the electrical characterization of n-channel a-SiGe:H TFTs with planarized gate electrode is presented. The planarized a-SiGe:H TFTs were fabricated at 200±C on corning glass substrate. The devices exhibit a subthreshold slope of 0.56 V/Decade, an on/off-current ratio approximately of 106 and off-current approximately of 0.3£10¡12 A. The results show an improvement of the electrical characteristics when are compared to those unplanarized devices fabricated at higher temperature. Moreover, the simulation of the device using a SPICE model is presented. 2013 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57025669010 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.1 Vol.59 |
| title | Electrical characterization of planarized a-SiGe:H Thin-film Transistors |
| topic | Física, Astronomía y Matemáticas low Thin spin spice on glass |
| url | https://www.redalyc.org/articulo.oa?id=57025669010 |