Chemical sensitivity of Mo gate MOS capacitors
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| Format: | Artículo científico |
| Language: | en |
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Sociedad Mexicana de Física A.C.
2006
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| author | R.M. Lombardi |
| author_facet | R.M. Lombardi |
| contents | Chemical sensitivity of Mo gate MOS capacitors R.M. Lombardi R. Aragón CINSO– CONICET–CITEFA Física, Astronomía y Matemáticas Mo gate MOS device hydrogen sensitivity Mo gate MOS capacitors exhibit a negative shift of their C–V characteristic by up to 240 mV, at 125°C, in response to 1000 ppm hydrogen, in controlled nitrogen atmospheres. The experimental methods for obtaining capacitance and conductance, as a function of polarisation voltage, as well as the relevant equivalent circuits are reviewed. The single–state interface state density, at the semiconductor–dielectric interface, decreases from 2.66 1011 cm–2e–v–1, in pure nitrogen, to 2.5 1011cm–2e–v–1 in 1000 ppm hydrogen in nitrogen mixtures, at this temperature. 2006 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57028295003 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.2 Vol.52 |
| format | Artículo científico |
| id | redalyc_57028295003 |
| institution | Redalyc |
| language | en |
| publishDate | 2006 |
| publisher | Sociedad Mexicana de Física A.C. |
| spellingShingle | Chemical sensitivity of Mo gate MOS capacitors R.M. Lombardi Física, Astronomía y Matemáticas Mo gate MOS device hydrogen sensitivity Chemical sensitivity of Mo gate MOS capacitors R.M. Lombardi R. Aragón CINSO– CONICET–CITEFA Física, Astronomía y Matemáticas Mo gate MOS device hydrogen sensitivity Mo gate MOS capacitors exhibit a negative shift of their C–V characteristic by up to 240 mV, at 125°C, in response to 1000 ppm hydrogen, in controlled nitrogen atmospheres. The experimental methods for obtaining capacitance and conductance, as a function of polarisation voltage, as well as the relevant equivalent circuits are reviewed. The single–state interface state density, at the semiconductor–dielectric interface, decreases from 2.66 1011 cm–2e–v–1, in pure nitrogen, to 2.5 1011cm–2e–v–1 in 1000 ppm hydrogen in nitrogen mixtures, at this temperature. 2006 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57028295003 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.2 Vol.52 |
| title | Chemical sensitivity of Mo gate MOS capacitors |
| topic | Física, Astronomía y Matemáticas Mo gate MOS device hydrogen sensitivity |
| url | https://www.redalyc.org/articulo.oa?id=57028295003 |