Modelling the C-V characteristics of MOS capacitor on high resistivity silicon substrate for PIN photodetector applications

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Bibliographic Details
Main Author:	J.A. Luna–López.
Format:	Artículo científico
Language:	en
Published:	Sociedad Mexicana de Física A.C. 2006
Subjects:	Física, Astronomía y Matemáticas MOS V characteristics HRS and LRS substrates high and low frequency C time of response majority and minority carriers
Online Access:	Acceder al recurso
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