Modelling the C-V characteristics of MOS capacitor on high resistivity silicon substrate for PIN photodetector applications
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| Format: | Artículo científico |
| Langue: | en |
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Sociedad Mexicana de Física A.C.
2006
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| _version_ | 1876451217572364288 |
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| author | J.A. Luna–López. |
| author_facet | J.A. Luna–López. |
| contents | Modelling the C-V characteristics of MOS capacitor on high resistivity silicon substrate for PIN photodetector applications J.A. Luna–López. M. Aceves–Mijares Oleksandr Malik R. Glaenzer Física, Astronomía y Matemáticas MOS V characteristics HRS and LRS substrates high and low frequency C time of response majority and minority carriers This work proposes an electrical model to simulate the C–V measurements of the MOS capacitor on high resistivity silicon. High resistivity silicon is used as a substrate for PIN photo detectors. C–V MOS capacitor characteristics on high resistivity silicon substrates differ considerably from the C–V characteristics of low resistivity silicon substrates due to potential drop and majority and minority carrier response time. MOS C–V characteristics on high and low resistivity substrates at different frequencies were modelled by means of a series capacitor and resistor network. The system predicts the experimental results very well. 2006 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57028295014 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.2 Vol.52 |
| format | Artículo científico |
| id | redalyc_57028295014 |
| institution | Redalyc |
| language | en |
| publishDate | 2006 |
| publisher | Sociedad Mexicana de Física A.C. |
| spellingShingle | Modelling the C-V characteristics of MOS capacitor on high resistivity silicon substrate for PIN photodetector applications J.A. Luna–López. Física, Astronomía y Matemáticas MOS V characteristics HRS and LRS substrates high and low frequency C time of response majority and minority carriers Modelling the C-V characteristics of MOS capacitor on high resistivity silicon substrate for PIN photodetector applications J.A. Luna–López. M. Aceves–Mijares Oleksandr Malik R. Glaenzer Física, Astronomía y Matemáticas MOS V characteristics HRS and LRS substrates high and low frequency C time of response majority and minority carriers This work proposes an electrical model to simulate the C–V measurements of the MOS capacitor on high resistivity silicon. High resistivity silicon is used as a substrate for PIN photo detectors. C–V MOS capacitor characteristics on high resistivity silicon substrates differ considerably from the C–V characteristics of low resistivity silicon substrates due to potential drop and majority and minority carrier response time. MOS C–V characteristics on high and low resistivity substrates at different frequencies were modelled by means of a series capacitor and resistor network. The system predicts the experimental results very well. 2006 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57028295014 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.2 Vol.52 |
| title | Modelling the C-V characteristics of MOS capacitor on high resistivity silicon substrate for PIN photodetector applications |
| topic | Física, Astronomía y Matemáticas MOS V characteristics HRS and LRS substrates high and low frequency C time of response majority and minority carriers |
| url | https://www.redalyc.org/articulo.oa?id=57028295014 |