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  • One step a-Si:H TFT’S with PECVD SiOx Ny gate insulator
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One step a-Si:H TFT’S with PECVD SiOx Ny gate insulator

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Bibliographic Details
Main Author: K.F. Albertin
Format: Artículo científico
Language:en
Published: Sociedad Mexicana de Física A.C. 2006
Subjects:
Física, Astronomía y Matemáticas
One mask step
silicon oxynitride
thin film transistors
Online Access:
Acceder al recurso
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Internet

https://www.redalyc.org/articulo.oa?id=57028295025

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