One step a-Si:H TFT’S with PECVD SiOx Ny gate insulator
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| Natura: | Artículo científico |
| Lingua: | en |
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Sociedad Mexicana de Física A.C.
2006
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| _version_ | 1876439817567338496 |
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| author | K.F. Albertin |
| author_facet | K.F. Albertin |
| contents | One step a-Si:H TFT’S with PECVD SiOx Ny gate insulator K.F. Albertin I. Pereyra Física, Astronomía y Matemáticas One mask step silicon oxynitride thin film transistors Amorphous silicon thin film transistors (TFT's), utilizing silicon dioxide (SiO2), silicon oxynitride (SiOxNy) and silicon nitride (Si3N4) obtained by PECVD as gate insulating material, are fabricated through just one masking process and characterized by drain current vs drain voltage and by drain current vs gate voltage (Ids vs. Vds and Ids vs. Vgs) measurements. 2006 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57028295025 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.2 Vol.52 |
| format | Artículo científico |
| id | redalyc_57028295025 |
| institution | Redalyc |
| language | en |
| publishDate | 2006 |
| publisher | Sociedad Mexicana de Física A.C. |
| spellingShingle | One step a-Si:H TFT’S with PECVD SiOx Ny gate insulator K.F. Albertin Física, Astronomía y Matemáticas One mask step silicon oxynitride thin film transistors One step a-Si:H TFT’S with PECVD SiOx Ny gate insulator K.F. Albertin I. Pereyra Física, Astronomía y Matemáticas One mask step silicon oxynitride thin film transistors Amorphous silicon thin film transistors (TFT's), utilizing silicon dioxide (SiO2), silicon oxynitride (SiOxNy) and silicon nitride (Si3N4) obtained by PECVD as gate insulating material, are fabricated through just one masking process and characterized by drain current vs drain voltage and by drain current vs gate voltage (Ids vs. Vds and Ids vs. Vgs) measurements. 2006 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57028295025 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.2 Vol.52 |
| title | One step a-Si:H TFT’S with PECVD SiOx Ny gate insulator |
| topic | Física, Astronomía y Matemáticas One mask step silicon oxynitride thin film transistors |
| url | https://www.redalyc.org/articulo.oa?id=57028295025 |