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| Natura: | Artículo científico |
| Lingua: | en |
| Pubblicazione: |
Sociedad Mexicana de Física A.C.
2007
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| Accesso online: | https://www.redalyc.org/articulo.oa?id=57036163023 |
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Sommario:
- Miniband structure analysis of n-type delta-doped GaAs superlattices I. Rodriguez-Vargas J. Madrigal-Melchor S.J. Vlaev Física, Astronomía y Matemáticas Delta tight binding model miniband structure doped superlattices The miniband structure of n-type delta-doped GaAs superlattices is studied using the nearest neighborssp3s§tight-binding model includingspin. The confining potential caused by the ionized impurities is obtained analytically within the lines of the Thomas-Fermi approximation.This potential is considered as an external perturbation in the tight-binding methodology and it is added to the diagonal terms of the tight-binding Hamiltonian. Special attention is paid to the miniband energy-width variation caused by the change in the impurity density and theinterwell distance. The results are compared with the available experimental and theoretical data and a good agreement is found. 2007 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57036163023 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.7 Vol.53