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| Format: | Artículo científico |
| Langue: | en |
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Sociedad Mexicana de Física A.C.
2007
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| Accès en ligne: | https://www.redalyc.org/articulo.oa?id=57036163024 |
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- Electronic structure of pn delta-doped quantum wells in GaAs I. Rodriguez-Vargas L.M. Gaggero-Sager Física, Astronomía y Matemáticas pn d Thomas doped quantum wells Fermi approximation Electronic structure We present the electron and hole subband structure in a coupled p- and n-type delta-doped quantum well in GaAs. The study is performedin the framework of the envelope function approximation via analytical expressions for the Hartree potential previously obtained through thelines of the Thomas-Fermi approximation. The calculations are focused on the electronic structure and specially on the determination of theone-dimensional p- and n-type Bohr radius as a function of the two dimensional acceptor and donor concentrations, respectively, in order toobtain the minimum distance between the delta-doped layers that avoids or generates a reduction in the potential barriers, which is essentialin the design of devices based on the coupling of p- and n-type delta-doped structures. 2007 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57036163024 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.7 Vol.53