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| Format: | Artículo científico |
| Language: | en |
| Published: |
Sociedad Mexicana de Física A.C.
2007
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| Online Access: | https://www.redalyc.org/articulo.oa?id=57036163030 |
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Table of Contents:
- Fundamental electronic transition of InGaN cubic quantum wells D.A. Contreras-Solorio J. Madrigal-Melchor H. Hernández-Cocoletzi J. Arriaga Física, Astronomía y Matemáticas Quantum wells semiconductor nitrides In this work we calculate the transition energy from the first level of holes to the first level of electrons (1h−1e)for cubic InxGa1−xN/InyGa1−yN quantum wells. We employ the empirical tight binding approach with an sp3 s ∗ orbital basis, nearest neighbors interactions and the spin-orbit coupling, together with the surface Green function matching method. We obtain the tight binding parameters of the alloy from those of the binary compounds GaN and InN using the virtual crystal approximation. We study the transition energy behavior varying the well width for three sets of concentrations: x = 0.15, y = 0.02; x = 0.3, y = 0.02 and x = 0.3, y = 0.05, taking into account the strain in the well. For the third set of concentrations, we make the calculations using values for the band offset of 30% and 50%. For the first two, we use 30%. 2007 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57036163030 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.7 Vol.53