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| Natura: | Artículo científico |
| Lingua: | en |
| Pubblicazione: |
Sociedad Mexicana de Física A.C.
2007
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| Accesso online: | https://www.redalyc.org/articulo.oa?id=57036163067 |
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Sommario:
- Spectroscopical analysis of luminescent silicon rich oxide films A. Morales C. Domínguez J. Barreto M. Riera M. Aceves J.A. Luna Z. Yu R. Kiebach Física, Astronomía y Matemáticas XPS Raman EFTEM Silicon clusters Photoluminescence Compositional, structural and optical properties of silicon rich oxide (SRO) films containing different silicon excess were investigated using X ray photoelectron spectroscopy (XPS), Raman spectroscopy, energy filtered transmission electron microscopy (EFTEM) and photoluminescence (PL). The XPS-Si2p peaks fitting showed the presence of Si − Si4 tetrahedra only for the SRO film with the highest silicon excess. Raman spectroscopy revealed amorphous phase silicon in the SRO films with lowest silicon excess; when it was increased, a sharp peak at around 517 cm−1 appeared, which corresponds to crystalline silicon. Si-nanoclusters were slightly observed by EFTEM in the SRO film with the lowest silicon content. They became more evident when the silicon excess was increased, in agreement to Raman spectra. A strong PL was observed in the SRO films with low silicon excess. However, in SRO films with the highest silicon excess, where the silicon agglomeration is greater, the PL practically disappeared. According to these results, we have analysed the dependence of photoluminescence on the composition and structure of the SRO films. 2007 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57036163067 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.7 Vol.53