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| Natura: | Artículo científico |
| Lingua: | en |
| Pubblicazione: |
Sociedad Mexicana de Física A.C.
2007
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| Accesso online: | https://www.redalyc.org/articulo.oa?id=57036163078 |
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Sommario:
- Study through STM of AuN films grown using PAPVD by pulsed ARC J.H Quintero J.S. Rueda D.F Arias H.A. Castillo A. Devia Física, Astronomía y Matemáticas STM Gold Nitride electric conductivity Due to the Au conductivity, good electric characteristics of AuN are expected, which could generate applications in the electronic industry.AuN films were grown through the Plasma Assisted Physic Vapor Deposition (PAPVD) by the pulsed arc technique. Films were chemicallycharacterized through X-Ray Photoelectron Spectroscopy (XPS) in order to determine its composition. Using Scanning Tunneling Mi-croscopy (STM), and due to the electric conductivity of the films, images and I-V curves were obtained in order to observe the morphologyof the films and to obtain the gap value, respectively. 2007 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57036163078 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.7 Vol.53