Fabrication and characterization of ZnO:Zn(n+)/Porous-Silicon/Si(p) heterojunctions for white light emitting diodes
Fuente:
Redalyc
Saved in:
| Main Author: | |
|---|---|
| Format: | Artículo científico |
| Language: | en |
| Published: |
Sociedad Mexicana de Física A.C.
2016
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1876457262031044608 |
|---|---|
| author | M.A. Vásquez-A |
| author_facet | M.A. Vásquez-A |
| contents | Fabrication and characterization of ZnO:Zn(n+)/Porous-Silicon/Si(p) heterojunctions for white light emitting diodes M.A. Vásquez-A G. Romero-Paredes J.A. Andraca-Adame R. Peña-Sierra Física, Astronomía y Matemáticas Porous Silicon Porous Silicon porous silicon porous silicon ZnO:Zn(n+) films The fabrication and characterization of electroluminescent ZnO:Zn(n+)/Porous Silicon/Si(p) heterojunctions is presented. Highly conductiveZnO films (ZnO:Zn(n+)) were produced by applying a temperature annealing at 400±C by 5 min to the ZnO/Zn/ZnO arrange formed byDC sputtering, and the Porous Silicon (PS) films were prepared on p-type (100) Si wafers by anodic etching. The ZnO:Zn(n+)/PS/Si(p)heterojunction is accomplished by applying a brief temperature annealing stage to the entire ZnO/Zn/ZnO/PS/Si structure to preserve thePS luminescent characteristics. The ZnO:Zn(n+) films were characterized by X-ray diffraction and Hall-van der Pauw measurements.The PS and ZnO:Zn(n+) films were also studied by photoluminescence (PL) measurements. The current-voltage characteristics of theheterojunctions showed well defined rectifying behavior with a turn-on voltage of 1.5 V and ideality factor of 5.4. The high ideality factor isexplained by the presence of electron tunneling transport aided by energy levels related to the defects at the heterojunction interface and intothe PS film. The saturation current and the series resistance of the heterostructure were4£10°7A/cm2and 16≠-cm2, respectively. Whitecolor electroluminescence is easily observed at the naked eye when excited with square wave pulses of 8 V and 1 KHz. 2016 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57042601002 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.1 Vol.62 |
| format | Artículo científico |
| id | redalyc_57042601002 |
| institution | Redalyc |
| language | en |
| publishDate | 2016 |
| publisher | Sociedad Mexicana de Física A.C. |
| spellingShingle | Fabrication and characterization of ZnO:Zn(n+)/Porous-Silicon/Si(p) heterojunctions for white light emitting diodes M.A. Vásquez-A Física, Astronomía y Matemáticas Porous Silicon Porous Silicon porous silicon porous silicon ZnO:Zn(n+) films Fabrication and characterization of ZnO:Zn(n+)/Porous-Silicon/Si(p) heterojunctions for white light emitting diodes M.A. Vásquez-A G. Romero-Paredes J.A. Andraca-Adame R. Peña-Sierra Física, Astronomía y Matemáticas Porous Silicon Porous Silicon porous silicon porous silicon ZnO:Zn(n+) films The fabrication and characterization of electroluminescent ZnO:Zn(n+)/Porous Silicon/Si(p) heterojunctions is presented. Highly conductiveZnO films (ZnO:Zn(n+)) were produced by applying a temperature annealing at 400±C by 5 min to the ZnO/Zn/ZnO arrange formed byDC sputtering, and the Porous Silicon (PS) films were prepared on p-type (100) Si wafers by anodic etching. The ZnO:Zn(n+)/PS/Si(p)heterojunction is accomplished by applying a brief temperature annealing stage to the entire ZnO/Zn/ZnO/PS/Si structure to preserve thePS luminescent characteristics. The ZnO:Zn(n+) films were characterized by X-ray diffraction and Hall-van der Pauw measurements.The PS and ZnO:Zn(n+) films were also studied by photoluminescence (PL) measurements. The current-voltage characteristics of theheterojunctions showed well defined rectifying behavior with a turn-on voltage of 1.5 V and ideality factor of 5.4. The high ideality factor isexplained by the presence of electron tunneling transport aided by energy levels related to the defects at the heterojunction interface and intothe PS film. The saturation current and the series resistance of the heterostructure were4£10°7A/cm2and 16≠-cm2, respectively. Whitecolor electroluminescence is easily observed at the naked eye when excited with square wave pulses of 8 V and 1 KHz. 2016 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57042601002 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.1 Vol.62 |
| title | Fabrication and characterization of ZnO:Zn(n+)/Porous-Silicon/Si(p) heterojunctions for white light emitting diodes |
| topic | Física, Astronomía y Matemáticas Porous Silicon Porous Silicon porous silicon porous silicon ZnO:Zn(n+) films |
| url | https://www.redalyc.org/articulo.oa?id=57042601002 |