Electrical characterization of GaN/ALN heterostructures grown by molecular beam epitaxy on silicon substrates

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Bibliographic Details
Main Author:	J.B. Rojas-Trigos
Format:	Artículo científico
Language:	es
Published:	Sociedad Mexicana de Física A.C. 2016
Subjects:	Física, Astronomía y Matemáticas insulator Hall effect semiconductor gallium nitride molecular beam epitaxy
Online Access:	Acceder al recurso
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