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Electrical characterization of GaN/ALN heterostructures grown by molecular beam epitaxy on silicon substrates

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Détails bibliographiques
Auteur principal:	J.B. Rojas-Trigos
Format:	Artículo científico
Langue:	es
Publié:	Sociedad Mexicana de Física A.C. 2016
Sujets:	Física, Astronomía y Matemáticas insulator Hall effect semiconductor gallium nitride molecular beam epitaxy
Accès en ligne:	Acceder al recurso
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

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