Impact of planarized gate electrode in bottom-gate thin-film transistors
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Redalyc
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| Natura: | Artículo científico |
| Lingua: | en |
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Sociedad Mexicana de Física A.C.
2016
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| _version_ | 1876488092605480960 |
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| author | M.A. Domínguez |
| author_facet | M.A. Domínguez |
| contents | Impact of planarized gate electrode in bottom-gate thin-film transistors M.A. Domínguez P. Rosales A. Torres F. Flores J.A. Luna S. Alcantara M. Moreno Física, Astronomía y Matemáticas Thin Thin germanium germanium simulation In this work, the fabrication of bottom-gate TFTs with unplanarized and planarized gate electrode are reported, as well simulations of theimpact of the gate planarization in the TFTs are presented. Previously in literature, a reduction of the contact resistance has been attributed tothis planarized structure. In order to provide a physical explanation of this improvement, the electrical performance of ambipolar a-SiGe:HTFTs with planarized gate electrode by Spin-On Glass is compared with unplanarized ambipolar a-SiGe:H TFTs. Then, the properties inthe main device interfaces are analyzed by physically-based simulations. The planarized TFTs have better characteristics such as field-effectmobility, on-current, threshold voltage and on/off-current ratio which are consequence of the improved contact resistance. 2016 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57045452007 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.3 Vol.62 |
| format | Artículo científico |
| id | redalyc_57045452007 |
| institution | Redalyc |
| language | en |
| publishDate | 2016 |
| publisher | Sociedad Mexicana de Física A.C. |
| spellingShingle | Impact of planarized gate electrode in bottom-gate thin-film transistors M.A. Domínguez Física, Astronomía y Matemáticas Thin Thin germanium germanium simulation Impact of planarized gate electrode in bottom-gate thin-film transistors M.A. Domínguez P. Rosales A. Torres F. Flores J.A. Luna S. Alcantara M. Moreno Física, Astronomía y Matemáticas Thin Thin germanium germanium simulation In this work, the fabrication of bottom-gate TFTs with unplanarized and planarized gate electrode are reported, as well simulations of theimpact of the gate planarization in the TFTs are presented. Previously in literature, a reduction of the contact resistance has been attributed tothis planarized structure. In order to provide a physical explanation of this improvement, the electrical performance of ambipolar a-SiGe:HTFTs with planarized gate electrode by Spin-On Glass is compared with unplanarized ambipolar a-SiGe:H TFTs. Then, the properties inthe main device interfaces are analyzed by physically-based simulations. The planarized TFTs have better characteristics such as field-effectmobility, on-current, threshold voltage and on/off-current ratio which are consequence of the improved contact resistance. 2016 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57045452007 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.3 Vol.62 |
| title | Impact of planarized gate electrode in bottom-gate thin-film transistors |
| topic | Física, Astronomía y Matemáticas Thin Thin germanium germanium simulation |
| url | https://www.redalyc.org/articulo.oa?id=57045452007 |