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Impact of planarized gate electrode in bottom-gate thin-film transistors

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Detalles Bibliográficos
Autor principal:	M.A. Domínguez
Formato:	Artículo científico
Lenguaje:	en
Publicado:	Sociedad Mexicana de Física A.C. 2016
Materias:	Física, Astronomía y Matemáticas Thin germanium simulation
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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